相关论文: Dynamical Negative Differential Resistance in Anti…
We report the precise control of tunneling magnetoresistance (TMR) in devices of self-assembled core/shell Fe$_3$O$_4$/Co$_{1-x}$Zn$_x$Fe$_2$O$_4$ nanoparticles ($0\leq x\leq 1$). Adjusting the magnetic anisotropy through the content of…
Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) of Cu have been measured in a coupled spin dimers and chains compound Cu2Fe2Ge4O13. Cu NQR has also been measured in an isostructural material Cu2Sc2Ge4O13 including…
We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 nm to the atomic scale and eventually to the tunneling regime by means of electromigration. These devices are mechanically stable…
Reaction currents in chemical networks usually increase when increasing their driving affinities. But far from equilibrium the opposite can also happen. We find that such negative differential response (NDR) occurs in reaction schemes of…
Spin dependent transport has been investigated for an {\it open shell singlet} diiron-oxo cluster. Currents and magnetoresistances have been studied, as a function of spin state, within the non-equilibrium Green's function approach. The…
We report a hidden density-wave instability in the trimer-based ruthenate Ba4Ru3O10, previously regarded as a pure antiferromagnet with a phase transition at TA=100 K. This transition is manifested in lattice parameters, transport,…
Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we…
We present a first-principles study on the spin denpendent conductance of five single-atom magnetic junctions consisting of a magnetic tip and an adatom adsorbed on a magnetic surface, i.e., the Co-Co/Co(001) and Ni-X/Ni(001) (X=Fe, Co, Ni,…
Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional…
We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…
Coherent spin-dependent electronic transport is investigated in a molecular junction made of polymeric chain attached to ferromagnetic electrodes (Ni and Co, respectively). Molecular system is described by a simple Huckel model, while the…
Tunneling spectroscopy measurements have been carried out on a single molecule device formed by two Pd nanocrystals (dia, $\sim$5 nm) electronically coupled by a conducting molecule, dimercaptodiphenylacetylene. The I-V data, obtained by…
The majority of recent works devoted to spin nematic phases deal with either frustrated magnets or with those described by Hamiltonians with large non-Heisenberg terms. We show in the present study that nonfrustrated antiferromagnets (AFs)…
We unravel the critical role of vibrational mode softening in single-molecule electronic devices at high bias. Our theoretical analysis is carried out with a minimal model for molecular junctions, with mode softening arising due to…
Two-dimensional (2D) magnetic materials have attracted much recent interest with unique properties emerging at the few-layer limit. Beyond the reported impacts on the static magnetic properties, the effects of reducing the dimensionality on…
We demonstrate that the different magnetic states of a Mn12 molecule can be distinguished in a two-probe transport experiment from a complete knowledge of the current-voltage curve. Our results, obtained with state-of-the-art…
We investigate the ground states of antiferromagnetic Mn nanochains on Ni(110) by spin-polarized scanning tunneling microscopy in combination with theory. While the ferrimagnetic linear trimer experimentally shows the predicted collinear…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
The spin-phase interference effects are studied analytically in resonant quantum tunneling of the N\'{e}el vector between degenerate excited levels in nanometer-scale single-domain antiferromagnets in the absence of an external magnetic…
Electron tunneling through a coupled quantum-dot dimer under a dc-bias is investigated. We find that a peak in the $I$-$V$ curve appears at low temperature when two discrete electronic states in the two quantum dots are aligned with each…