相关论文: A two-channel model for Spin-relaxation noise

We measure telegraph noise of current fluctuations in an electrostatically defined quantum dot in bilayer graphene by real-time detection of single electron tunneling with a capacitively coupled neighboring quantum dot. Suppression of the…

Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the effects of TLS have been hampered by a lack of surface…

Spin-spin relaxation time ($T_2$) and magnetic susceptibility ($\chi$) of the second layer $^3$He adsorbed on Grafoil, exfoliated graphite, preplated with a monolayer $^4$He are studied by pulsed-NMR in a density range of $0.68 \leq \rho…

Recent experiments by F. Yoshihara et al. [Phys. Rev. Lett. 97, 167001 (2006)] and by K. Kakuyanagi et al. (cond-mat/0609564) provided information on decoherence of the echo signal in Josephson-junction flux qubits at various bias…

We present results for the spin conductance of the one dimensional spin-1/2 Heisenberg and XY model coupled to phonons. We apply an approach based on the Stochastic Series Expansion (Quantum Monte Carlo) method to evaluate the conductance…

Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise…

Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…

Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed…

We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300K and 30K. We have found that the noise amplitude…

Superconducting quantum interference devices (SQUIDs) and related circuits made of aluminum are known to display $1/\omega$ flux noise, where $\omega$ is frequency. A recent experiment showed that the application of an external magnetic…

A methodology is presented here for deriving true experimental axial stress-strain curves in both tension and compression for monolayer graphene through the shift of the 2D Raman peak that is present in all graphitic materials. The…

A single-spin qubit placed near the surface of a conductor acquires an additional contribution to its $1/T_1$ relaxation rate due to magnetic noise created by electric current fluctuations in the material. We analyze this technique as a…

A theoretical formulation for spin transport through an antiferromagnetic (AF) insulator is presented in the case driven/detected by direct/inverse spin Hall effect in two heavy metal contacts. The spin signal is shown to be transferred by…

Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent…

Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…

We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the…

Spin fluctuations have a substantial influence on the electron and lattice behaviors in magnetic materials, which, however, is difficult to be tracked properly by prevalent first-principles methods. We propose a versatile self-adaptive…

We analyze recent data on the complex inductance of dc SQUIDs that show 1/f inductance noise highly correlated with conventional 1/f flux noise. We argue that these data imply a formation of long range order in fractal spin structures. We…

We study the influence of ripple waves originating from the electromechanical effects on spin relaxation caused by electromagnetic fields in armchair and zigzag graphene nanoribbons (GNRs). By utilizing analytical expressions supported by…

Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary for optimal qubit operation. We study spin decoherence due…