相关论文: Imaging of Single La Vacancies in LaMnO$_{3}$
We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter and heavier dopants with high precision. Using multislice STEM imaging and…
Atomic resolution imaging is key to understanding thin film growth and how a particular set of conditions influences properties. Whilst such imaging in the scanning transmission electron microscope (STEM) has had transformative impact in…
The presence of oxygen vacancy, as well as ordering of vacancies plays an important role in determining the electronic, ionic and thermal transport properties of many transition metal oxide materials. Controlling the concentration of oxygen…
With pulsed laser deposition we have grown c-axis oriented thin films of the nominal composition LaMnO$_{3}$ (LMO) on LSAT(001) substrates. We find that, depending on the oxygen background pressure during growth, the LMO films contain…
Understanding how foreign chemical species bond to atomic vacancies in graphene layers can advance our ability to tailor the electronic and magnetic properties of defective graphenic materials. Here we use ultra-high vacuum scanning…
Using a method Raman of spectroscopy and considering a non-uniformity of allocation of vacancies in a monocrystal, it is shown that lines with the small intensity (caused by presence of vacancies) have a major intensity in the sample of a…
Using density-functional-theory (DFT) calculations with the HSE06 hybrid functional, we accurately evaluate the critical thickness of LaAlO3 film for the intrinsic doping in LaAlO3/SrTiO3 (LAO/STO) heterstructures. The calculated critical…
The recent discovery of superconductivity in La3Ni2O7-{\delta} under high pressure with a transition temperature around 80 K has sparked extensive experimental and theoretical efforts. Several key questions regarding the pairing mechanism…
Oxygen vacancies in nickelates are known to introduce a variety of emergent phenomena and are considered to significantly affect conductivity. Few studies have examined real-space evidence for oxygen vacancies on the surface, particularly…
Wide bandgap (~3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier mobility (~320 cm2 V-1 s-1) with a high carrier concentration…
A measurement technique is described which has the potential to map the atomic site occupancies of ultracold atoms in a short-period three-dimensional optical lattice. The method uses accordion and pinning lattices, together with…
This paper presents a regularized regression model with a two-level structural sparsity penalty applied to locate individual atoms in a noisy scanning transmission electron microscopy image (STEM). In crystals, the locations of atoms is…
We demonstrate a method to determine the position of single atoms in a three-dimensional optical lattice. Atoms are sparsely loaded from a far-off-resonant optical tweezer into a few vertical planes of a cubic optical lattice positioned…
Recording field ion microscope images under field evaporating conditions and subsequently reconstructing the underlying atomic configuration, called three-dimensional field ion microscopy (3D-FIM) is one of the few techniques capable of…
The 3-dimensional orientation of La atom modulations has been mapped in two thin films of La2CoMnO6 grown on SrTiO3 and LSAT ([La,Sr,Al,Ta] oxide) using a 4D-scanning transmission electron microscopy (4D-STEM) method based on the recently…
The modification and tailoring the characteristics of nanostructured materials are of great interest due to controllable and unusual inherent properties in such materials. A simple spray pyrolysis technique is used to prepare pure and…
Copper binary compounds are often intrinsic p-type semiconductors due to the presence of Cu(I) vacancies, with corresponding hole carriers in the valence band. If the free carrier concentration is high enough, localized plasmon resonances…
The ability to localize, identify and measure the electronic environment of individual atoms will provide fundamental insights into many issues in materials science, physics and nanotechnology. We demonstrate, using an aberration-corrected…
The method of Raman scattering is used to investigate the cross edge of a p-dichlorobenzene monocrystal, which was grown up by a Bridgmen method. Comparison of intensities of additional lines of a spectrum of the lattice oscillations of…
The enigma of the emergent ferromagnetic state in tensile-strained LaCoO3 thin films remains to be explored because of the lack of a well agreed explanation. The direct magnetic imaging technique using a low-temperature magnetic force…