相关论文: Room Temperature Giant Charge-to-Spin Conversion a…

Rashba-like spin-orbit interaction at oxide heterostructures emerges as a much sought-after feature in the context of oxide spintronics and spin-orbitronics. KTaO$_3$ (KTO) is one of the best substrates available for the purpose, owing to…

Spin-orbit torque efficiency is conventionally fixed by bulk materials. $D$-wave altermagnets introduce an additional nonrelativistic spin-charge conversion channel beyond inverse spin-Hall effect. Using prototypical candidate RuO$_2$ as an…

Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been…

Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with…

Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low…

We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the…

The tetragonal domain structure in SrTiO$_{3}$ (STO) is known to modulate the normal-state carrier density in LaAlO$_{3}$/SrTiO$_{3}$ (LAO/STO) heterostructures, among other electronic properties, but the effect of STO domains on the…

The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel gamma-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to…

We measure the gate voltage ($V_g$) dependence of the superconducting properties and the spin-orbit interaction in the (111)-oriented LaAlO$_3$/SrTiO$_3$ interface. Superconductivity is observed in a dome-shaped region in the carrier…

The introduction of manganite buffer layers, La7/8Sr1/8MnO3 (LSMO) in particular, at the metallic interface between SrTiO3 (STO) and another band insulator suppresses the carrier density of the interfacial two-dimensional electron gas…

We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator $Bi_2Se_{3}$ onto single crystalline layers of YIG $(Y_{3}Fe_{5}O_{12})$ and polycrystalline films of Permalloy $(Py =…

We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt…

Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge…

The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted…

Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still…

We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 {\deg}C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is…

First-principles density functional calculations demonstrate that a spin-polarized two-dimensional conducting state can be realized at the interface between two non-magnetic band insulators. The (001) surface of the diamagnetic insulator…

The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW)…

We present a formalism for calculating the image potential for a two-dimensional electron gas (2DEG) with Rashba spin-orbit interaction (SOI) as well as for a 2D topological insulator (TI). The formalism is further generalized for including…

The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic…