相关论文: Strongly Anisotropic Spin Relaxation in the Neutra…

We present an experimental study of the longitudinal electron-spin relaxation time (T1) of negatively charged nitrogen-vacancy (NV) ensembles in diamond. T1 was studied as a function of temperature from 5 to 475 K and magnetic field from 0…

Understanding the effect of vibrations on the relaxation process of individual spins is crucial for implementing nano systems for quantum information and quantum metrology applications. In this work, we present a theoretical microscopic…

We investigate the fundamental mechanism of spin phonon coupling in the negatively charged nitrogen vacancy center $(\mathrm{NV}^-)$ in diamond in order to calculate the spin lattice relaxation time $T_1$ and its temperature dependence from…

Understanding the limits to the spin-coherence of the nitrogen-vacancy (NV) center in diamond is vital to realizing the full potential of this quantum system. We show that relaxation on the $|m_{s}=-1\rangle \leftrightarrow…

The nitrogen-vacancy (N-V) center in diamond is a promising atomic-scale system for solid-state quantum information processing. Its spin-dependent photoluminescence has enabled sensitive measurements on single N-V centers, such as: electron…

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times ($T_1$) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67…

Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties…

We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which…

Spin-lattice relaxation within the nitrogen-vacancy (NV) center's electronic ground-state spin triplet limits its coherence times, and thereby impacts its performance in quantum applications. We report measurements of the relaxation rates…

Optically accessible solid state defect spins serve as a primary platform for quantum information processing, where precise control of the electron spin and ancillary nuclear spins is essential for operation. Using the nitrogen-vacancy (NV)…

The neutral charge state plays an important role in quantum information and sensing applications based on nitrogen-vacancy centers. However, the orbital and spin dynamics remain unexplored. Here, we use resonant excitation of single centers…

The negatively charged nitrogen-vacancy centre (NV$^-$) in diamond has been utilized in a wide variety of sensing applications. The centre's long spin coherence and relaxation times ($T_2^*$, $T_2$ and $T_1$) at room temperature are crucial…

The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and…

We report on measurements of the photoluminescence (PL) properties of single nitrogen-vacancy (NV) centers in diamond at temperatures between 4-300 K. We observe a strong reduction of the PL intensity and spin contrast between ca. 10-100 K…

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid…

The silicon-vacancy center in diamond offers attractive opportunities in quantum photonics due to its favorable optical properties and optically addressable electronic spin. Here, we combine both to achieve all-optical coherent control of…

Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…

We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient…

We report the experimental study of the temperature-dependence of the longitudinal spin relaxation time $T_1$ of single Nitrogen-Vacancy (NV) centers hosted in nanodiamonds. To determine the relaxation mechanisms at stake, measurements of…

Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded…