相关论文: Selective multiple domain wall injection using spi…

The demonstration of the generation and control of a pure spin current (without net charge flow) by electric fields and/or temperature gradient has been an essential leap in the quest for low-power consumption electronics. The key issue of…

It is shown that a local bend of a nanowire is a source of pinning potential for a transversal head-to-head (tail-to-tail) domain wall. Eigenfrequency of the domain wall free oscillations at the pinning potential and the effective friction…

We investigate experimentally the effects of externally applied strain on the injection of 180$^\circ$ domain walls (DW) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study the strain,…

We demonstrate deterministic control of dipole-field-stabilized skyrmions by means of spin-orbit torques arising from heavy transition-metal seed layers. Experiments are performed on amorphous Fe/Gd multilayers that are patterned into wires…

Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show…

We study the magnetic domain wall structure in magnetic bilayers (two ultrathin ferromagnetic layers separated by a non magnetic spacer) with perpendicular magnetization. Combining magnetic force and ballistic electron emission…

The purpose of the research is the construction of the analytical model for description of spin-polarized current-driven ferromagnetic domain wall motion with a skyrmion building block. The dependence of velocity of ferromagnetic domain…

Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…

Currents induce magnetization torques via spin-transfer when the spin angular momentum is conserved or via relativistic spin-orbit coupling. Beyond simple models, the relationship between material properties and spin-orbit torques is not…

Magnetic domain walls function as a wave guide for low energy magnons. In this paper we develop the theory for the non-local transport of these bound magnons through a ferromagnetic insulator that are injected and detected electrically in…

Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare…

Finding a new control parameter for magnetic domain wall (DW) motion in magnetic nanostructures is important in general and in particular for the spintronics applications. Here, we show that a circularly polarized magnetic field (CPMF) at…

Magnetoresistance measurements in the CPP geometry have been performed on single electrodeposited Co nanowires exchange biased on one side by a sputtered amorphous GdCo layer. This geometry allows the stabilization of a single domain wall…

We investigate the inversion process of magnetic domain walls (DWs) propagating through synthetic noncollinear magnetic textures, whereby an up/down DW can be transformed into a down/up DW and vice versa. We exploit the lateral coupling…

Magnetic domain walls in antiferromagnets have been proposed as key components for faster conventional information processing, thanks to their enhanced stability and ultrafast propagation. However, how non-conventional computing methods…

We report on current induced domain wall propagation in a patterned GaMnAs microwire with perpendicular magnetization. An unexpected slowing down of the propagation velocity has been found when the moving domain wall extends over only half…

We exploit the geometry of magnetic nanowires, which define 1D contacts to an encapsulated graphene channel, to introduce an out-of-plane component in the polarisation of spin carriers. By design, the magnetic nanowires traverse the angled…

The understanding of antiferromagnetic domain walls, which are the interface between domains with different N\'eel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future…

The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high…

We simulate the electron transport in vertical bi-layer nanowire which can be fabricated in molecular beam epitaxy process with lateral confinement potential formed by means of cleaved overgrowth or surface oxidization methods giving…