相关论文: A phononic switch based on ferroelectric domain wa…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…
Materials that can produce large controllable strains are widely used in shape memory devices, actuators and sensors. Great efforts have been made to improve the strain outputs of various material systems. Among them, ferroelastic…
The switching dynamics of ferroelectric materials is a crucial intrinsic property which directly affects the operation and performance of ferroelectric devices. In conventional ferroelectric materials, the typical ferroelectric switching…
We experimentally demonstrate the dynamical tuning of the acoustic field in a surface acoustic wave (SAW) cavity defined by a periodic arrangement of metal stripes on LiNbO3 substrate. Applying a DC voltage to the ends of the metal grid…
Thermoelectrics (TE) materials manifest themselves in direct conversion of temperature differences to electric power and vice versa. Despite remarkable advances have been achieved in the past decades for various TE systems, the energy…
We calculate the phonon-dispersion relations of several two-dimensional materials and diamond using the density-functional based tight-binding approach (DFTB). Our goal is to verify if this numerically efficient method provides sufficiently…
While electrical compatibility constraints normally prevent head-to-head (HH) and tail-to-tail (TT) domain walls from forming in ferroelectric materials, we propose that such domain walls could be stabilized by intentional growth of atomic…
Charged domain walls and boundaries in ferroelectric materials display distinct phenomena, such as an increased conductivity due to the accumulation of bound charges. Here, we report the electron microscopy observations of atomic-scale…
Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in…
Ferroic materials are well known to exhibit heterogeneity in the form of domain walls. Understanding the properties of these boundaries is crucial for controlling functionality with external stimuli and for realizing their potential for…
Accurate evaluation of buried thermal interfaces is vital for understanding and optimizing heat dissipation in wide- and ultra-wide-bandgap (WBG/UWBG) semiconductor devices. Conventional time-domain thermoreflectance (TDTR) typically probes…
Flexoelectric effect is the coupling between strain, polarization and their gradients, which are prominent at the nanoscale. Although this effect is important to understand nanostructures, such as domain walls in ferroelectrics, its…
The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for…
We report on a theoretical study of the spin-current excited dynamics of domain walls (DWs) in ferrimagnets in the vicinity of the angular momentum compensation point. Effective Lagrangian and nonlinear dynamic equations are derived for a…
Metal-based electronics is attractive for fast and radiation-hard electronic circuits and remains one of the longstanding goals for researchers. The emergence of 1T-TaS$_2$, a layered material exhibiting strong charge density wave (CDW)…
We present in-situ transmission electron microscopy observations of domain wall motion in thin freestanding potassium niobate single-crystals. We observe that not all domains of a given polarization orientation are equally switchable in…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
One fundamental obstacle to efficient ferromagnetic spintronics is magnetic precession, which intrinsically limits the dynamics of magnetic textures, We demonstrate that the domain wall precession fully vanishes with a record mobility when…
The weighted density approximation, its implementation and its application to ferroelectric materials is discussed. Calculations are presented for several perovskite oxides and related materials. In general the weighted density…
Antiferromagnetic materials are outstanding candidates for next generation spintronic applications, because their ultrafast spin dynamics makes it possible to realize several orders of magnitude higher-speed devices than conventional…