相关论文: Efficient and controlled domain wall nucleation fo…
A possibility is discussed of observing spin injection effect on the ferromagnet domain structure by means of resonant excitation of the domain wall oscillations by a spin-polarized ac injection current. The natural frequency of the domain…
We demonstrate the possibility to drive an antiferromagnet domain-wall at high velocities by field-like N\'{e}el spin-orbit torques. Such torques arise from current-induced local fields that alternate their orientation on each sub-lattice…
A well-known feature of magnetic field driven dynamics of domain walls in ferromagnets is the existence of a threshold driving force at which the internal magnetization of the domain wall starts to precess -- a phenomenon known as the…
The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high…
The spin dynamics of all ferromagnetic materials are governed by two types of collective excitations: spin waves and domain walls. The fundamental processes underlying these collective modes, such as exchange interactions and magnetic…
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show…
We present time-resolved measurements of the displacement of magnetic domain-walls (DWs) driven by vertical spin-polarized currents in track-shaped magnetic tunnel junctions. In these structures we observe very high DW velocities (600 m/s)…
As an intriguing ultra-small particle-like magnetic texture, skyrmion has attracted lots of research interests in next-generation ultra-dense and low power magnetic memory/logic designs. Previous studies have demonstrated a single…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
Spin-orbit interaction derived spin torques provide a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. A basic and critical question for applications is…
We report on the controlled switching of domain wall (DW) magnetization in aligned stripe domain structures, stabilized in [Co (0.44 nm)/Pt (0.7 nm)]$_X$ ($X = 48$, 100, 150) multilayers with perpendicular magnetic anisotropy. The switching…
We predict a mechanism to controllably manipulate domain walls in kagome antiferromagnets via a single linearly polarized spin-wave source. We show by means of atomistic spin dynamics simulations of antiferromagnets with kagome structure…
Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM)…
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in…
The motion of magnetic domain walls in ultrathin magnetic heterostructures driven by current via the spin Hall torque is described. We show results from perpendicularly magnetized CoFeB|MgO heterostructures with various heavy metal…
Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of…
The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
Two types of domain walls exist in magnetically soft cylindrical nanowires: the transverse-vortex wall (TVW) and the Bloch-point wall (BPW). The latter is expected to prevent the usual Walker breakdown, and thus enable high domain wall…
We present artificial neural network design using spin devices that achieves ultra low voltage operation, low power consumption, high speed, and high integration density. We employ spin torque switched nano-magnets for modelling neuron and…