相关论文: Efficient and controlled domain wall nucleation fo…
We present a circuit model to describe the electron transport through a domain wall in a ferromagnetic nanowire. The domain wall is treated as a coherent 4-terminal device with incoming and outgoing channels of spin up and down and the…
The ultrafast control of nanoscale spin textures such as magnetic domain walls or skyrmions is essential for advancing high-speed, high-density spintronics. However, imaging their dynamics will require a technique that combines nanometer…
The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of the interfacial Dzyaloshinskii-Moriya interaction…
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I…
In the last decade, two revolutionary concepts in nano magnetism emerged from research for storage technologies and advanced information processing. The first suggests the use of magnetic domain walls (DWs) in ferromagnetic nanowires to…
We investigate experimentally the effects of externally applied strain on the injection of 180$^\circ$ domain walls (DW) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study the strain,…
An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion…
Discovering alternative ways to drive domain wall (DW) dynamics is crucial for advancing spintronic applications. Here we demonstrate via atomistic spin dynamics simulations that optical torques can efficiently drive 90^{\circ} DWs in the…
We demonstrate from both simulation and experiment a simple scheme for selective injection of multiple domain walls in a magnetic nanowire. The structure consists of a side-contact misaligned Hall bar made of ferromagnet/heavy metal…
The current-driven domain wall motion in a ratchet memory due to spin-orbit torques is studied from both full micromagnetic simulations and the one dimensional model. Within the framework of this model, the integration of the anisotropy…
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate…
We demonstrate the possibility to write and modulate the magnetic domain walls in a TbFeCo single layer nanowire (300 nm width, 150 $\mu$m length). To realize this, a tiny magnetic domain was nucleated by an Oersted field produced by a 1.6…
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of…
We have studied current-driven domain wall motion in modified Ga_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by using spatially resolved Polar Magneto-Optical Kerr Effect Microscopy and micromagnetic simulation.…
We theoretically investigate the transfer of angular momentum between a spin superfluid and a domain wall in an exchange coupled easy-axis and easy-plane magnetic insulator system. A domain wall in the easy-axis magnet absorbs spin angular…
There has been a plethora of studies on domain wall dynamics in magnetic nanostrips, mainly because of its versatile non-linear physics and potential applications in data storage devices. However, most of the studies focus on out-of-plane…
Magnetic domain wall motion has recently garnered significant interest as a physical mechanism to enable energy-efficient, next-generation brain-inspired computing architectures. However, realizing all behaviors required for neuromorphic…
Fast domain wall motion in systems with perpendicular magnetization is necessary for many novel applications such as the racetrack memory, domain wall logic devices and artificial synapses. The domain wall speed has been greatly improved…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
Using magnetic force microscopy and micromagnetic simulations, we studied the effect of Oersted magnetic fields on the chirality of transverse magnetic domain walls in Fe$_{20}$Ni$_{80}$/Ir bilayer nanostrips. Applying nanosecond current…