相关论文: Giant Rashba-type spin splitting through spin-depe…
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al$_x$Ga$_{1-x}$As quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to…
Bismuth produces different types of ordered superstructures on the InAs(100) surface, depending on the growth procedure and coverage. The (2x1) phase forms at completion of a Bi monolayer and consists of a uniformly oriented array of…
Recent studies have shown that the non-relativistic antiferromagnetic ordering could generate momentum-dependent spin splitting analogous to the Rashba effect, but free from the requirement of relativistic spin-orbit coupling. Whereas the…
The influence of Rashba spin-orbit interaction on the spin dynamics of a topologically disordered hopping system is studied in this paper. This is a significant generalization of a previous investigation, where an ordered (polaronic)…
We present a theoretical study of the interplay between cyclotron motion and spin splitting of charge carriers in solids. While many of our results apply more generally, we focus especially on discussing the Rashba model describing…
Harnessing the interplay of symmetry breaking and spin-orbit coupling, we investigate Rashba spin splitting in buckled honeycomb (SrHfO$_3$)$_2$/(LaAlO$_3$)$_4$(111) superlattices using density functional theory (DFT) calculations with a…
We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…
The intrinsic spin-Hall effects (SHE) in $p$-doped semiconductors [S. Murakami et al., Science 301, 1348 (2003)] and two-dimensional electron gases with Rashba spin-orbit coupling [J. Sinova et al., Phys. Rev. Lett. 92, 126603 (2004)] have…
It is of considerable technological importance to achieve an electrical control of magnetism of sufficient magnitude. To overcome the in-plane shape anisotropy, needed is the electrical control of a perpendicular magnetic anisotropy (PMA).…
The spin splitting of conduction band electrons in inversion-asymmetric InGaAs/InP quantum wells is studied by Shubnikov-de Haas measurements combining the analysis of beating patterns and coincidence measurements in doubly tilted magnetic…
Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state…
The Rashba Hamiltonian describes the splitting of the conduction band as a result of spin-orbit coupling in the presence of an asymmetric confinement potential and is commonly used to model the electronic structure of confined narrow-gap…
We consider the Higgs mode at nonzero momentum in superconductors and demonstrate that in the presence of Rashba spin-orbit coupling, it couples linearly with an external exchange field. The Higgs-spin coupling dramatically modifies the…
Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a…
The Rashba Hamiltonian describes the splitting of the conduction band as a result of spin-orbit coupling in the presence of an external field and is commonly used to model the electronic structure of confined narrow-gap semiconductors. Due…
The experimental assessment of the strength ($\alpha_R$) of the Rashba spin-orbit coupling is rather indirect and involves the measurement of the spin relaxation length from magnetotransport, together with a model of weak antilocalization.…
The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new…
Experimentally it is still challenging to epitaxially grow Bi(111) bilayer (BL) on conventional semiconductor substrate. Here, we propose a substrate of $\beta-$In$_2$Se$_3$(0001) with van der Waals like cleavage and large band gap of…
Rashba spin splitting in two-dimensional (2D) semiconductor systems is generally calculated in a ${\bf k} \cdot {\bf p}$ Luttinger-Kohn approach where the spin splitting due to asymmetry emerges naturally from the bulk band structure. In…
Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric…