相关论文: Pure Spin Current Injection in Hydrogenated Graphe…
Monolayer transition metal dichalcogenides have recently become a playground for spin- and valleytronics research. Their low energy spectrum can be described by Dirac cones on the corners of Brillouin zone, but the physical properties are…
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick…
The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…
By means of density functional theory (DFT) calculations we have quantitatively estimated the impact of the spontaneous polarization (SP) of the SiC(0001) substrate on the electronic properties of quasi-freestanding graphene (QFG) decoupled…
Pure spin currents are measured in micron-wide channels of GaAs two-dimensional electron gas (2DEG). Spins are injected and detected using quantum point contacts, which become spin polarized at high magnetic field. High sensitivity to the…
Spin electronic structure of graphene pi-states and Pt 5d-states for the Graphene/Pt interface has been investigated. Here, we report a large induced spin-orbit splitting (~70-100 meV) of graphene pi-states with formation of non-degenerated…
At each of the boundaries of the two-dimensional (2D) rectangular conductor parallel to the electric current there arises a stripe with an electric field transverse to the current and a 100% electron spin polarization. The two stripes have…
The use of graphene in spintronic devices is contingent on its ability to convert a spin current into a charge current. We have systematically investigated the spin pumping induced spin-to-charge current conversion at the Graphene/FM…
Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge…
Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation…
In order to enhance spin injection efficiency from ferromagnetic (FM) metal into a two-dimensional electron gas (2DEG), we introduce another FM metal and two tunnel barriers (I) between them to investigate the current polarization in such…
Recently, the production of ultrahigh-density (~10^{19}cm^{-3}) spin-polarized deuterium (SPD) atoms was demonstrated, from the photodissociation of deuterium iodide, but the upper density limit was not determined. Here, we present studies…
We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle…
The pure spin currents, i.e., the counterflow of particles with opposite spin orientations, can be optically injected in semiconductors. Here, we develop a phenomenological theory, which describes the polarization dependencies of spin…
The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the…
By means of first principles calculations we demonstrate an effective method to tailor the local spin configuration of graphene on Co(0001) surface through nitrogen doping. Two different site occupancies of the N impurities are discussed…
Spin pumping enables the vertical transport of pure spin current through Al in a Pd/Al/Ni80Fe20(Py) trilayer film, in which the Py acts as a spin battery. The spin current injected into the Al flows through the Al to reach the Pd, resulting…
Electroluminescence in organic semiconductors strongly depends on the relative population of excited singlet and triplet excitonic states resulting from recombination of injected carriers. In conventional organic light-emitting diodes…
Spin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…