相关论文: Electric-field-induced extremely large change in r…
Due to its two dimensional nature, ferromagnetism and charge doping can be induced by proximity and electric field effects in graphene. Taking advantage of these features, we propose an electrically engineered spin valve by combining two…
By computing spin-polarized electronic transport across a finite zigzag graphene ribbon bridging two metallic graphene electrodes, we demonstrate, as a proof of principle, that devices featuring 100% magnetoresistance can be built entirely…
In metal-insulator transition materials, a small perturbation can shift the delicate balance between competing or coexisting electronic phases, leading to dramatic changes of the material's properties. Using La0.7Sr0.3MnO3, a prototypical…
A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in…
The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…
We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt…
Yttrium iron garnet (YIG) is a ferrimagnetic insulator valued for its high Curie temperature, very low magnetic damping, and ability to support long-range spin-wave transport. These qualities have established it as a cornerstone material in…
Thin garnet films are becoming central for magnon-spintronics and spin-orbitronics devices as they show versatile magnetic properties together with low magnetic losses. These fields would benefit from materials in which heat does not affect…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…
We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van…
Magnetic materials have found wide application ranging from electronics and memories to medicine. Essential to these advances is the control of the magnetic order. To date, most room-temperature applications have a fixed magnetic moment…
The effect of 16O-18O isotope exchange on the electric resistivity was studied for (La(1-y)Pr(y))0.7Ca0.3MnO3 ceramic samples. Depending on y, this mixed perovskite exhibited different types of low-temperature behavior ranging from…
The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms,…
Yttrium iron garnet is a complex ferrimagnetic insulator with 20 magnon modes which is used extensively in fundamental experimental studies of magnetisation dynamics. As a transition metal oxide with moderate gap (2.8 eV), yttrium iron…
We have investigated the behavior of the resistance of graphene at the $n=0$ Landau Level in an intense magnetic field $H$. Employing a low-dissipation technique (with power $P<$3 fW), we find that, at low temperature $T$, the resistance at…
We carried out a concerted effort to determine the absolute sign of the inverse spin Hall effect voltage generated by spin currents injected into a normal metal. We focus on yttrium iron garnet (YIG)|platinum bilayers at room temperature,…
The magnetic insulator Yttrium Iron Garnet can be grown with exceptional quality, has a ferrimagnetic transition temperature of nearly 600 K, and is used in microwave and spintronic devices that can operate at room temperature. The most…
The gigantic reduction of the electric resistivity under the applied magnetic field, CMR effect, is now widely accepted to appear in the vicinity of the insulator to metal transition of the perovskite manganites. Recently, we have…
Large magnetoresistive materials are of immense interest for a number of spintronic applications by developing high density magnetic memory devices, magnetic sensors and magnetic switches. Colossal magnetoresistance, for which resistivity…