相关论文: Frequency shift keying by current modulation in a …

Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…

We measure the power spectral density of frequency fluctuations in nanocontact spin torque oscillators over time scales up to 50 ms. We use a mixer to convert oscillator signals ranging from 10 GHz to 40 GHz into a band near 70 MHz before…

We report on a voltage tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce…

Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…

The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…

This work investigates nanosecond superparamagnetic switching in 50 nm diameter in-plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial anisotropy, dwell times below 10 ns and auto-correlation times down to…

Spintronics had a widespread impact over the past decades due to transferring information by spin rather than electric currents. Its further development requires miniaturization and reduction of characteristic timescales of spin dynamics…

The spatiotemporal nature of neuronal behavior in spiking neural networks (SNNs) make SNNs promising for edge applications that require high energy efficiency. To realize SNNs in hardware, spintronic neuron implementations can bring…

Spin transfer magnetization dynamics have led to considerable advances in Spintronics, including opportunities for new nanoscale radiofrequency devices. Among the new functionalities is the radiofrequency(rf) detection using the spin diode…

We investigated the possibilities of controlling the nonlinear frequency shift of the magnetization oscillations in a spin-transfer nanoscillator by varying the magnitude and direction of the bias magnetic field. We considered both…

We demonstrate a high-quality spin orbit torque nano-oscillator comprised of spin wave modes confined by the magnetic field by the strongly inhomogeneous dipole field of a nearby micromagnet. This approach enables variable spatial…

We present a circuit design of a spintronic oscillator based on magnetic tunnel junction. In this design, a dc current is passed through a magnetic tunnel junction which is connected to a feed-back wire below it. Any fluctuation in the…

Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…

We investigate the origin of the experimentally observed varying current-frequency nonlinearity of the propagating spin wave mode in nano-contact spin torque oscillators. Nominally identical devices with 100 nm diameter are characterized by…

Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…

Spin-torque oscillators are strong candidates as nano-scale microwave generators and detectors. However, because of large amplitude-phase coupling (non-linearity), phase noise is enhanced over other linear auto-oscillators. One way to…

Super-harmonic injection locking of single nano-contact (NC) spin-torque vortex oscillators (STVOs) subject to a small microwave current has been explored. Frequency locking was observed up to the fourth harmonic of the STVO fundamental…

Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

Energy-efficiency and design-complexity of high-speed on-chip and inter-chip data-interconnects has emerged as the major bottleneck for high-performance computing-systems. As a solution, we propose an ultra-low energy interconnect…