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相关论文: Ising-type Magnetic Anisotropy in CePd$_2$As$_2$

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The anisotropic magnetic properties of the antiferromagnetic compound CePd$_2$Ge$_2$, crystallizing in the tetragonal crystal structure have been investigated in detail on a single crystal grown by Czochralski method. From the electrical…

强关联电子 · 物理学 2015-06-16 Arvind Maurya , R. Kulkarni , S. K. Dhar , A. Thamizhavel

CeCd$_3$P$_3$ and CeCd$_3$As$_3$ compounds adopt the hexagonal ScAl$_3$C$_3$-type structure, where magnetic Ce ions on a triangular lattice order antiferromagnetically below $T_\text{N} \sim$0.42~K. Their crystalline electric field (CEF)…

强关联电子 · 物理学 2023-02-24 Obinna P. Uzoh , Suyoung Kim , Eundeok Mun

Highly anisotropic properties of CeIr$_3$Si$_2$ have been observed by the magnetization $M$($B$), electrical resistivity $\rho$, and specific heat measurements on a single-crystalline sample. This compound with an orthorhombic structure…

强关联电子 · 物理学 2009-11-13 K. Shigetoh , A. Ishida , Y. Ayabe , T. Onimaru , K. Umeo , Y. Muro , K. Motoya , M. Sera , T. Takabatake

In order to investigate the anisotropic magnetic properties of CeAg$_2$Ge$_2$, we have successfully grown the single crystals, for the first time, by high temperature solution growth (flux) method. We have performed a detailed study of the…

强关联电子 · 物理学 2009-11-11 A. Thamizhavel , R. Kulkarni , S. K. Dhar

Millimeter sized ThCr$_2$Si$_2$-type CeNi$_2$As$_2$ single crystal was synthesized by NaAs flux method and its physical properties were investigated by magnetization, transport and specific heat measurements. In contrast to the previously…

We have successfully grown the single crystals of CeAg$_2$Ge$_2$, for the first time, by flux method and studied the anisotropic physical properties by measuring the electrical resistivity, magnetic susceptibility and specific heat. We…

强关联电子 · 物理学 2009-11-13 A. Thamizhavel , R. Kulkarni , S. K. Dhar

We present a comprehensive investigation into the physical properties of intermetallic ErPd$_2$Si$_2$, a compound renowned for its intriguing magnetic and electronic characteristics. We confirm the tetragonal crystal structure of…

We report the magnetic properties of the layered heavy fermion antiferromagnet CePdGa$_{6}$, and their evolution upon tuning with the application of magnetic field and pressure. CePdGa$_{6}$ orders antiferromagnetically below $T\rm_{N}$ =…

强关联电子 · 物理学 2023-01-05 H. Q. Ye , T. Le , H. Su , Y. N. Zhang , S. S. Luo , M. J. Gutmann , H. Q. Yuan , M. Smidman

Single crystals of $R$Cd$_{0.67}$As$_2$ ($R$ = La and Ce) have been synthesized by high temperature ternary melt and their physical properties have been explored by means of magnetization, specific heat, electrical resistivity, Hall…

强关联电子 · 物理学 2023-02-27 Suyoung Kim , Obinna P. Uzoh , Eundeok Mun

Single crystals of CeGe and its non-magnetic analogue LaGe have been grown by Czochralski method. CeGe compound crystallizes in the orthorhombic FeB-type crystal structure with the space group \textit{Pnma} (#62). The anisotropic magnetic…

强关联电子 · 物理学 2012-07-18 Pranab Kumar Das , Neeraj Kumar , R. Kulkarni , S. K. Dhar , A. Thamizhavel

We have performed X-ray powder diffraction, magnetization, electrical resistivity, heat capacity and inelastic neutron scattering (INS) to investigate the physical properties of the intermetallic series of compounds CeCuBi$_{2-x}$Sb$_{x}$.…

We report the anisotropic magnetic properties of the ternary compound ErAl$_2$Ge$_2$. Single crystals of this compound were grown by high temperature solution growth technique,using Al:Ge eutectic composition as flux. From the powder x-ray…

强关联电子 · 物理学 2020-04-22 Moumita Nandi , A. Thamizhavel , S. K. Dhar

Electrical resistivity rho, magnetic susceptibility chi, magnetization M and specific heat measurements are reported on a singlecrystalline sample of CePd5Al2, showing successive antiferromagnetic orderings at T_N1=4.1 K and T_N2=2.9 K. The…

The magnetocrystalline anisotropy exhibited in PrPd$_2$Ge$_2$ single crystal has been investigated by measuring the magnetization, magnetic susceptibility, electrical resistivity and heat capacity. PrPd$_2$Ge$_2$ crystallizes in the well…

强关联电子 · 物理学 2017-02-02 Arvind Maurya , S. K. Dhar , A. Thamizhavel

We report anisotropic resistivity measurements of the heavy-fermion superconductor CeRh$_2$As$_2$ in magnetic fields up to 16 T and temperatures down to 0.35 K. The measured CeRh$_2$As$_2$ resistivity shows a signature corresponding to the…

超导电性 · 物理学 2022-10-25 Sanu Mishra , Yu Liu , Eric D. Bauer , Filip Ronning , Sean. M. Thomas

Single-crystal synchrotron x-ray diffraction studies of CeFeAsO reveal strong anisotropy in the charge correlation lengths along or perpendicular to the in-plane antiferromagnetic (AFM) wave-vector at low temperatures, indicating an…

超导电性 · 物理学 2014-07-08 H. -F. Li , J. -Q. Yan , J. W. Kim , R. W. McCallum , T. A. Lograsso , D. Vaknin

The tetragonal heavy fermion compound CeRh2As2 has intriguing low temperature symmetry breaking phases whose nature is unclear. The unconventional superconducting phase is complemented by other normal state phases which presumably involve…

强关联电子 · 物理学 2024-09-04 Burkhard Schmidt , Peter Thalmeier

Anisotropy in strongly correlated materials is a central parameter in determining the electronic ground state and is tuned through the local crystalline electric field. This is notably the case in the CeCo$_{x}$Rh$_{1-x}$In$_{5}$ system…

We report the successful synthesis of the polycrystalline compounds CePd$_2$As$_{2-x}$P$_x$ ($0 \leq x \leq 2$) and their physical properties by measuring the transport, magnetic and thermodynamic behaviors as a function of temperature…

强关联电子 · 物理学 2013-12-25 T Shang , Y H Chen , W B Jiang , Y Chen , L Jiao , J L Zhang , Z F Weng , X Lu , H Q Yuan

In intercalated transition metal dichalcogenide $Fe_xTaS_2$ (0.2 $\leq$ x $\leq$ 0.4) single crystals, large magnetic anisotropy is observed. Transport property measurements indicate that heavy Fe-doping leads to a large anisotropy of…

强关联电子 · 物理学 2017-05-10 G. Wu , B. L. Kang , Y. L. Li , T. Wu , N. Z. Wang , X. G. Luo , Z. Sun , L. J. Zou , X. H. Chen
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