相关论文: Polarimetric analysis of stress anisotropy in nano…

Integrated polarimetric receivers have the potential to define a new generation of lightweight, high-performance instrumentation for remote sensing. To date, on-chip polarization-selective devices such as polarizing beam-splitters have yet…

We report on low mechanical loss in a high-stress silicon nitride (Si_{3}N_{4}) membrane at temperatures below 100 mK. We isolate a membrane via a phononic shield formed within a supporting silicon frame, and measure the mechanical quality…

Sintering of printed porcelain filaments can be strongly affected by overhang geometry, thin features, and printing-induced anisotropy. These effects are particularly difficult to simulate because they require accurately capturing the…

We present a model for the effect of stress on thin amorphous films that develop atop ion-irradiated silicon, based on the mechanism of ion-induced anisotropic plastic flow. Using only parameters directly measured or known to high accuracy,…

In recent years, novel materials supporting in-plane anisotropic polaritons have attracted a lot of research interest due to their capability of shaping nanoscale field distributions and controlling nanophotonic energy flows. Here we report…

Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…

The microscopic distribution of strain and stress plays a crucial role for the performance, safety, and lifetime of components in aeronautics, automotive and critical infrastructure [1]. While non-destructive methods for measuring the…

Ion-beam irradiation of an amorphizable material such as Si or Ge may lead to spontaneous pattern formation, rather than flat surfaces, for irradiation beyond some critical angle against the surface normal. It is observed experimentally…

Silicon nitride (SiN) micro- and nanomechanical resonators have attracted a lot of attention in various research fields due to their exceptionally high quality factors ($Q$s). Despite their popularity, the origin of the limiting loss…

In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different thermal expansion coefficients, a SiN passivation layer exerts a…

Using the Landau-Ginzburg-Devonshire approach, we study stress-induced transformations of polarization switching in ferrielectric CuInP2S6 nanoparticles for three different shapes: a disk, a sphere, and a needle. Semiconducting properties…

Although low-dimensional $S = 1$ antiferromagnets remain of great interest, difficulty in obtaining high-quality single crystals of the newest materials hinders experimental research in this area. Polycrystalline samples are more readily…

Voltage-induced magnetic anisotropy has been quantitatively studied in polycrystalline Ni thin film deposited on flexible substrate using microstrip ferromagnetic resonance. This anisotropy is induced by a piezoelectric actuator on which…

Experimental phonon imaging in diamond anvils cell is demonstrated to be an adequate tool to extract the complete set of elastic constants of single-crystalline silicon up to the ZB$\rightarrow \beta-$Sn transition (10 GPa). Contrary to…

Polarization control is a critical function in integrated photonic circuits, directly impacting performance, stability, and signal integrity. In this work, we demonstrate the integration of multiferroic two-dimensional (2D) material…

The paper suggests to treat the infrared reflectivity spectra of single crystal perovskite relaxors as fine-grained ferroelectric ceramics: locally frozen polarization makes the dielectric function strongly anisotropic in the phonon…

The interface between organic semiconductor [OSC]/ferromagnetic [FM] material can exhibit ferromagnetism due to their orbital hybridization. Charge/spin transfer may occur from FM to OSC layer leading to the formation of `spinterface' i.e.…

We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique…

The development of efficient low-loss electro-optic and nonlinear components based on silicon or its related compounds, such as nitrides and oxides, is expected to dramatically enhance silicon photonics by eliminating the need for…