相关论文: Density dependent exciton dynamics and L valley an…

Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds…

To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated…

The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe…

The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is…

We have measured the ultrafast anisotropic optical response of highly doped graphene to an intense single cycle terahertz pulse. The time profile of the terahertz-induced anisotropy signal at 800 nm has minima and maxima repeating those of…

We demonstrate optical pump/THz probe (OPTP) spectroscopy with a variable external magnetic field (0-9 T) in which the time-dependent THz signal is measured by echelon-based single-shot detection at a 1 kHz repetition rate. The method…

A microscopic approach is developed to compute the excitonic properties and the corresponding terahertz response for semiconductors characterized by anisotropic effective masses. The approach is illustrated for the example of germanium…

Femtosecond optical pump-probe technique is used to study charge carrier dynamics in few-layer MoS2 samples fabricated by mechanical exfoliation. An ultrafast pump pulse excites carriers and differential reflection of a probe pulse tuned to…

We report the first terahertz study of the intra-excitonic 1s-2p transition at high excitation densities in GaAs/AlGaAs quantum wells. A strong shift, broadening, and ultimately the disappearance of this resonance occurs with increasing…

Optical pumping of excited exciton states in semiconductor quantum wells is a tool for realisation of ultra-compact terahertz (THz) lasers based on stimulated optical transition between excited (2p) and ground (1s) exciton state. We show…

We investigate the dynamical formation of excitons from photoexcited electron-hole plasma and its subsequent decay dynamics in monolayer MoS2 grown by chemical vapor deposition using ultrafast pump and terahertz probe spectroscopy.…

The precessional magnetization dynamics of a chromium dioxide$(100)$ film is examined in an all-optical pump-probe setup. The frequency dependence on the external field is used to extract the uniaxial in-plane anisotropy constant. The…

Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially-indirect excitons to a high density electron-plasma state.…

We employ the Dynamical Projective Operatorial Approach (DPOA) to investigate the ultrafast optical excitations of germanium under intense, ultrashort pump pulses. The method has very low resource demand relative to many other available…

Exciton energy structure and population dynamics in a wide CdTe/CdZnTe quantum well are studied by spectrally-resolved pump-probe spectroscopy. Multiple excitonic resonances in reflectance spectra are observed and identified by solving…

Using a novel approach to ultrafast resonant pump-probe spectroscopy we investigate the spectral shape and dynamics of absorption features related to the A exciton in an hBN/MoSe$_2$/hBN van der Waals heterostructure. While in a pure…

The intensity dependence of anisotropic third-order optical nonlinearity approaching the damage threshold in ZnSe and GaP crystals is studied by the femtosecond laser pump-probe measurements, which can greatly reduce the laser-matter…

This article exploits group-IV germanium (Ge) quantum dots (QDs) on Silicon-on-Insulator (SOI) grown by molecular beam epitaxy (MBE) in order to explore its optical behaviour in the Terahertz (THz) regime. In this work, Ge QDs, pumped by an…

We study the dipole-dipole spectral broadening of a resonance line at high atomic densities when the self-broadening dominates. The selective reflection spectrum of a weak probe beam from the interface of the cell window and rubidium vapor…

We compute and analyze the dependence of excitonic second- and third-harmonic generation (SHG/THG) as a function of the optical excitation intensity in the presence of static electric fields by solving the semiconductor Bloch equations. Our…