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相关论文: Topological Exciton Bands in Moir\'e Heterojunctio…

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Twisted bilayers, featuring interfacial ferroelectricity in the form of array of polar domains, combined with incommensurate two-dimensional layers in a single van der Waals heterostructures allows for generation of purely electrostatic…

介观与纳米尺度物理 · 物理学 2026-02-10 V. V. Enaldiev , Z. Z. Alisultanov

We revisit and extend the standard bosonic interpretation of interlayer excitons in the moir\'e potential of twisted heterostructures of transition-metal dichalcogenides. In our experiments, we probe a high quality MoSe$_2$/WSe$_2$ van der…

We discuss here the effect of band nesting and topology on the spectrum of excitons in a single layer of MoS$_2$, a prototype transition metal dichalcogenide material. We solve for the single particle states using the ab initio based…

材料科学 · 物理学 2020-03-25 Maciej Bieniek , Ludmiła Szulakowska , Paweł Hawrylak

We study the topological bands in twisted bilayer transition metal dichalcogenides in an external magnetic field. We first focus on a paradigmatic model of WSe$_2$, which can be described in an adiabatic approximation as particles moving in…

介观与纳米尺度物理 · 物理学 2024-09-11 Kryštof Kolář , Kang Yang , Felix von Oppen , Christophe Mora

Bilayer van der Waals (vdW) heterostructures such as MoS2/WS2 and MoSe2/WSe2 have attracted much attention recently, particularly because of their type II band alignments and the formation of interlayer exciton as the lowest-energy…

介观与纳米尺度物理 · 物理学 2017-12-14 Shiyuan Gao , Li Yang , Catalin D. Spataru

Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured…

Van der Waals heterostructures obtained by artificially stacking two-dimensional crystals represent the frontier of material engineering, demonstrating properties superior to those of the starting materials. Fine control of the interlayer…

The observation of zero field fractional quantum Hall analogs in twisted transition metal dichalcogenides (TMDs) asks for a deeper understanding of what mechanisms lead to topological flat bands in two-dimensional heterostructures, and what…

介观与纳米尺度物理 · 物理学 2024-05-10 Valentin Crépel , Nicolas Regnault , Raquel Queiroz

Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice system, which possesses an incommensurate Moire pattern and…

材料科学 · 物理学 2019-12-19 Yu-Hao Shen , Wen-Yi Tong , He Hu , Jun-Ding Zheng , Chun-Gang Duan

Exciton-exciton interactions are key to understanding non-linear optical and transport phenomena in van der Waals heterobilayers, which emerged as versatile platforms to study correlated electronic states. We present a combined…

We study the energies and optical spectra of excitons in twisted bilayers of anisotropic van der Waals semiconductors exhibiting moir\'e patterns, taking phosphorene as a case study. Following the electronic Hamiltonian introduced by us in…

介观与纳米尺度物理 · 物理学 2023-08-08 Isaac Soltero , David A. Ruiz-Tijerina

We propose twisted bilayers of certain group IV and IVB trigonal transition metal dichalcogenides (TMDs) MX$_{2}$ (M$=$Zr, Hf, Sn and X$=$S, Se) as moir\'{e} materials. In monolayer form these TMDs have conduction band minima near the three…

介观与纳米尺度物理 · 物理学 2025-11-07 Chao Lei , Perry T. Mahon , Allan H. MacDonald

Flexible long period moir\' e superlattices form in two-dimensional van der Waals crystals containing layers that differ slightly in lattice constant or orientation. In this Letter we show theoretically that isolated flat moir\' e bands…

介观与纳米尺度物理 · 物理学 2018-07-12 Fengcheng Wu , Timothy Lovorn , Emanuel Tutuc , A. H. MacDonald

van der Waals heterostructures consisting of vertically stacked transition-metal dichalcogenides (TMDs) exhibit a rich landscape of bright and dark intra- and interlayer excitons. In spite of a growing literature in this field of research,…

介观与纳米尺度物理 · 物理学 2023-04-17 Joakim Hagel , Samuel Brem , Christopher Linderälv , Paul Erhart , Ermin Malic

Twist-engineering of the electronic structure of van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal…

Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically…

Van der Waals heterostructures composed of transition metal dichalcogenide monolayers (TMDs) are characterized by their truly rich excitonic properties which are determined by their structural, geometric and electronic properties: In…

Twisted bilayer graphene aligned with hexagonal boron nitride (TBG/hBN) hosts rich topological and correlated quantum phases, such as (fractional) Chern insulators, whose character is dictated by the topology of the moir\'{e} flat band.…

强关联电子 · 物理学 2026-05-01 Huiwen Wang , Wei Jiang

Controlling matter-light interactions with cavities is of fundamental importance in modern science and technology. It is exemplified in the strong-coupling regime, where matter-light hybrid modes form, with properties controllable via the…

介观与纳米尺度物理 · 物理学 2021-11-03 Long Zhang , Fengcheng Wu , Shaocong Hou , Zhe Zhang , Yu-Hsun Chou , Kenji Watanabe , Takashi Taniguchi , Stephen R. Forrest , Hui Deng

Optical excitation serves as a powerful approach to control the electronic structure of layered Van der Waals materials via many-body screening effects, induced by photoexcited free carriers, or via light-driven coherence, such as optical…