相关论文: The Miniband Alignment Field-Effect Transistor: a …

We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a…

The complex impedance of a semiconductor superlattice biased into the regime of negative differential conductivity and driven by an additional GHz ac voltage is computed. From a simulation of the nonlinear spatio-temporal dynamics of…

The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As…

With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…

Electronic devices that work in the quantum regime often employ hybrid nanostructures to bring about a nonlinear behaviour. The nonlinearity that these can provide has proven to be useful, in particular, for applications in quantum…

Topology is a key ingredient driving the emergence of quantum devices. Topological field-effect transistor (TFET) has been proposed to outperform the conventional FET by replacing the ON state with topology-protected quantized conductance,…

Electrons in condensed matter may transition into a variety of broken-symmetry phase states due to electron-electron interactions. Applying diverse mean-field approximations to the interaction term is arguably the simplest way to identify…

Symmetry considerations suggest that moire superlattices formed by twisted two-dimensional materials should preserve overall inversion symmetry. However, experiments consistently report robust ferroelectricity in systems such as twisted…

Electronic transport through nanostructures is greatly affected by the presence of superconducting leads. If the interface between the nanostructure and the superconductors is sufficiently transparent, a dissipationless current…

Strong metastability and history dependence are observed in DC and pulsed transport studies of flux-line lattices in 2H-$NbSe_{2}$, leading to the identification of two distinct states of the lattice with different spatial ordering. The…

Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…

The supermoir\'e lattice, arising from the interference of multiple moir\'e patterns, dramatically reshapes the electronic band structure by introducing new minibands and modifying band dispersion. Concurrently, strong electronic…

The evolution of two coupled mini-bands, generated by alternating barrier widths dimerization of a superlattice, driven by intense AC fields is investigated. The present model delivers a useful framework for the transition between the…

Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…

The conducting and mechanical properties of a metallic nanowire formed at the junction between two macroscopic metallic electrodes are investigated. Both two- and three-dimensional wires with a W(ide)-N(arrow)-W(ide) geometry are modelled…

We study a general model describing a self-detecting single electron transistor realized by a suspended carbon nanotube actuated by a nearby antenna. The main features of the device, recently observed in a number of experiments, are…

Interfaces in oxide heterostructures always provide a fertile ground for emergent properties. Charge transfer from a high energy band to a low energy opponent is naturally expected, as occurring in semiconductor $p$-$n$ junctions. In this…

Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…

The electron transport in current-biased superconducting nano-bridges is determined by the motion of the quantum vortex confined in the internal disorder landscape. Here we consider a simple case of a single or two neighbouring linear…

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements…