相关论文: Valley filtering by a line-defect in graphene: qua…
We consider a lateral hetero-junction where the left and right leads are made of monolayer graphene and the middle region is made of a gapped tilted Dirac material (borophene or quinoid graphene) illuminated with off-resonant circularly…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
The scattering of two-dimensional (2D) massless Dirac electrons is investigated in the presence of a random array of circular mass barriers. The inverse momentum relaxation time and the Hall factor are calculated and used to obtain parallel…
We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical…
Measuring degeneracy and broken-symmetry states of a system at nanoscale requires extremely high energy and spatial resolution, which has so far eluded direct observation. Here, we realize measurement of the degeneracy and subtle…
We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism,…
Integrated on-chip photonics increasingly relies on wave propagation that remains stable in the presence of fabrication imperfections, tight bends, and dense routing. Valley photonic crystals (VPCs) offer an attractive path: by opening a…
In graphene, long-wavelength deformations that result in elastic shear strain couple to the low-energy Dirac electrons as pseudogauge fields. Using a scalable tight-binding model, we consider analogs to magnetotransport in mesoscopic…
Twisting bilayer sheets of graphene have been proven to be an efficient way to manipulate the electronic Dirac-like properties, resulting in flat bands at magic angles. Inspired by the electronic model, we develop a continuum model for the…
The honeycomb lattice of graphene is a unique two-dimensional (2D) system where the quantum mechanics of electrons is equivalent to that of relativistic Dirac fermions. Novel nanometer-scale behavior in this material, including electronic…
Since their discovery, graphene-based systems represent an exceptional playground to explore the emergence of peculiar quantum effects. The present paper focuses on the anomalous appearence of strong infrared phonon resonances in the…
Real magnetic and lattice deformation gauge fields have been investigated in honeycomb lattice of graphene. The coexistence of these two gauges will induce a gap difference between two valley points ($K$ and $K'$) of system. This gap…
We propose a valley- and spin-filter based on a normal/ferromagnetic/normal molybdenum disulfide (MoS$_2$) junction where the polarizations of the valley and the spin can be inverted by reversing the direction of the exchange field in the…
The existence of nontrivial Berry phases associated with two inequivalent valleys in graphene provides interesting opportunities for investigating the valley-projected topological states. Examples of such studies include observation of…
We present a theory of the photovoltaic valley-dependent Hall effect in a two-dimensional Dirac semiconductor subject to an intense near-resonant electromagnetic field. Our theory captures and elucidates the influence of both the…
Using the variable phase method, we reformulate the Dirac equation governing the charge carriers in graphene into a nonlinear first-order differential equation from which we can treat both confined-state problems in electron waveguides and…
We present a method for obtaining quantum transport properties in graphene that uniquely combines three crucial features: microscopic treatment of charge disorder, fully quantum mechanical analysis of transport, and the ability to model…
In this theoretical study, we explore the manner in which the quantum correction due to weak localization is suppressed in weakly-disordered graphene, when it is subjected to the application of a non-zero voltage. Using a nonequilibrium…
The valley in the band structure of materials has gained a lot of attention recently. The promising applications of the valley degree of freedom include the next-generation valleytronic devices, quantum information processing, quantum…
Topological phases of matter are often characterized by interface states, which were already known to occur at the boundary of a band-inverted junction in semiconductor heterostructures. In IV-VI compounds such interface states are properly…