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Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…

介观与纳米尺度物理 · 物理学 2013-04-25 Matias Urdampilleta , Svetlana Klyatskaya , Jean-Pierre Cleuziou , Mario Ruben , Wolfgang Wernsdorfer

Using Y3Fe5O12 (YIG) thin films grown by our sputtering technique, we study dynamic spin transport in nonmagnetic (NM), ferromagnetic (FM) and antiferromagnetic (AF) materials by ferromagnetic resonance (FMR) spin pumping. From both inverse…

材料科学 · 物理学 2015-06-23 Chunhui Du , Hailong Wang , P. Chris Hammel , Fengyuan Yang

Spintronics has advanced through discoveries of various electrically-driven spin dynamics in nanomagnets. Here, we report a novel switching dynamics of spin systems driven by spin-orbit torque, using a noncollinear antiferromagnetic…

介观与纳米尺度物理 · 物理学 2026-05-19 Yuma Sato , Yutaro Takeuchi , Yuta Yamane , Shun Kanai , Shunsuke Fukami

A variety of emergent phenomena has been enabled by interface engineering in the complex oxides heterostructures. While extensive attention has been attracted to LaMnO3 (LMO) thin films for observing the control of functionalities at its…

Controlling spin current and magnetic exchange coupling by applying an electric field and achieving high spin injection efficiency at the same time in a nanostructure coupled to ferromagnetic electrodes have been the outstanding challenges…

介观与纳米尺度物理 · 物理学 2017-09-13 Kamal B Dhungana , Ranjit Pati

Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…

材料科学 · 物理学 2017-03-08 Jun-Yang Chen , Li He , Jian-Ping Wang , Mo Li

Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…

介观与纳米尺度物理 · 物理学 2025-01-23 Badsha Sekh , Hasibur Rahaman , Ramu Maddu , Pinkesh Kumar Mishra , Tianli Jin , S. N. Piramanayagam

Interest in the magnetism of organic compounds is growing because of new organic magnets, spin-based electronics and the diverse properties of magnetic edge states in graphene nanoribbons. Electron spin resonance spectroscopy combined with…

介观与纳米尺度物理 · 物理学 2025-04-28 Gregory Czap , Christoph Wolf , Jose Reina-Gálvez , Mark H. Sherwood , Christopher P. Lutz

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel…

The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…

Recent progress in physics on spin dependent transport in magnetic nanostructures is reviewed. Special attention is paid on the spin accumulation and spin current caused by spin injection into non-magnetic metals and semiconductors and…

介观与纳米尺度物理 · 物理学 2007-05-23 S. Maekawa

Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model…

The demand for faster magnetization switching speeds and lower energy consumption has driven the field of spintronics in recent years. The magnetic tunnel junction is the most developed spintronic memory device in which the magnetization of…

Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a…

Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1)…

Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…

The surface of topological insulators is proposed as a promising platform for spintronics and quantum information applications. In particular, when time- reversal symmetry is broken, topological surface states are expected to exhibit a wide…

Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy…

Magnetic materials with strong spin-orbit coupling (SOC) are essential for the advancement of spin-orbitronic devices, as they enable efficient spin-charge conversion, complex magnetic structures, spin-valley physics, topological phases and…

Spin-orbit coupling in magnetic systems lacking inversion symmetry can give rise to non trivial spin textures. Magnetic thin films and heterostructures are potential candidates for the formation of skyrmions and other non-collinear spin…