相关论文: Impact of g-factors and valleys on spin qubits in …
Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits,…
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-photon resonances are observed due to mixing of magnetic…
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from…
Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally…
The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS$_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement…
Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit…
The magnetization of semiconductor quantum dots in the presence of spin-orbit coupling and interactions is investigated numerically. When the dot is occupied by two electrons we find that a level crossing between the two lowest many-body…
Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar…
In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…
Recent experiments with silicon qubits demonstrated strong coupling of a microwave resonator to the spin of a single electron in a double quantum dot, opening up the possibility of long-range spin-spin interactions. We present our…
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst…
The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most…
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…