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相关论文: Gate-Tuned Thermoelectric Power in Black Phosphoru…

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Using first principles calculations we showed that the electronic and optical properties of single layer black phosphorus (BP) depend strongly on the applied strain. Due to the strong anisotropic atomic structure of BP, its electronic…

介观与纳米尺度物理 · 物理学 2015-06-23 Deniz Çakır , Hasan Sahin , François M. Peeters

We report novel design for thermoelectric device which can control thermoelectric properties of p-type and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as positive and negative…

材料科学 · 物理学 2015-06-24 Ryohei Takayanagi , Takenori Fujii , Atsushi Asamitsu

We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied…

The device of electric double-layer transistor (EDLT) with ionic liquid has been employed as an effective way to dope carriers over a wide range, which can induce metallic state, magnetic reconstruction and superconducting transition.…

超导电性 · 物理学 2018-08-30 Shuai Zhang , Moran Gao , Huanyan Fu , Xinmin Wang , Zhian Ren , Genfu Chen

Black phosphorus (BP) offers considerable promise for infrared and visible photonics. Efficient tuning of the bandgap and higher subbands in BP by modulation of the Fermi level or application of vertical electric fields has been previously…

Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction.…

材料科学 · 物理学 2014-07-14 Kai-Tak Lam , Zhipeng Dong , Jing Guo

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer…

We study the thermoelectric properties of three-dimensional topological insulators in magnetic fields with many holes (or pores) in the bulk. We find that at high density of these holes in the transport direction the thermoelectric figure…

介观与纳米尺度物理 · 物理学 2012-03-15 O. A. Tretiakov , Ar. Abanov , Jairo Sinova

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…

介观与纳米尺度物理 · 物理学 2015-03-12 Dohun Kim , Paul Syers , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer

The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP)…

应用物理 · 物理学 2019-03-18 Leonardo Viti , Antonio Politano , Miriam Serena Vitiello

We report analytic results on quantum capacitance (C$_{q}$) measurements and their optical tuning in dual-gated device with potassium-doped multi-layered black phosphorous (BP) as the channel material. The two-dimensional (2D) layered BP is…

材料科学 · 物理学 2017-08-09 Parijat Sengupta , Shaloo Rakheja

We investigate the possibility of band structure engineering in the recently predicted 2D layered form of blue phosphorus via an electric field (E$_z$) applied perpendicular to the layer(s). Using density functional theory, we study the…

介观与纳米尺度物理 · 物理学 2015-03-26 Barun Ghosh , Suhas Nahas , Somnath Bhowmick , Amit Agarwal

Tuning band gaps in two-dimensional (2D) materials is of great interest in the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was…

材料科学 · 物理学 2017-09-13 Sun-Woo Kim , Hyun Jung , Hyun-Jung Kim , Jin-Ho Choi , Su-Huai Wei , Jun-Hyung Cho

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve…

介观与纳米尺度物理 · 物理学 2018-04-30 W. Dickerson , V. Tayari , I. Fakih , A. Korinek , M. Caporali , M. Serrano-Ruiz , M. Peruzzini , S. Heun , G. A. Botton , T. Szkopek

Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015<x<0.06). Thermoelectric power analysis gives the information about…

Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…

材料科学 · 物理学 2015-06-18 Likai Li , Yijun Yu , Guo Jun Ye , Qingqin Ge , Xuedong Ou , Hua Wu , Donglai Feng , Xian Hui Chen , Yuanbo Zhang

Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier…

介观与纳米尺度物理 · 物理学 2017-11-22 Gen Long , Shuigang Xu , Xiangbin Cai , Zefei Wu , Tianyi Han , Jiangxiazi Lin , Yuanwei Wang , Liheng An , Yuan Cai , Xinran Wang , Ning Wang

The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to…

介观与纳米尺度物理 · 物理学 2016-06-15 V. Tayari , N. Hemsworth , O. Cyr-Choinière , W. Dickerson , G. Gervais , T. Szkopek

The thermoelectric properties of distorted bismuth (110) layer are investigated using first-principles calculations combined with the Boltzmann transport equation for both electrons and phonons. To accurately predict the electronic and…

介观与纳米尺度物理 · 物理学 2016-06-07 L. Cheng , H. J. Liu , J. Zhang , J. Wei , J. H. Liang , P. H. Jiang , D. D. Fan , L. Sun , J. Shi

Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as…