相关论文: Two competing interpretations of Kelvin Probe Forc…
Experiments that measure extremely small gravitational forces are often hampered by the presence of non-gravitational forces that can neither be calculated nor separately measured. Among these spurious forces is electrostatic attraction…
A numerical analysis of the origin of the atomic-scale contrast in Kelvin probe force microscopy (KPFM) is presented. Atomistic simulations of the tip-sample interaction force field have been combined with a non-contact Atomic Force…
An in-depth understanding of the electronic properties of grain boundaries (GB) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very high and hence limit the solar cell…
Scanning Kelvin probe microscopy (SKPM) is a powerful technique for macroscopic imaging of the electrostatic potential above a surface. Though most often used to image work-function variations of conductive surfaces, it can also be used to…
The distance dependence and atomic-scale contrast observed in nominal contact potential difference (CPD) signals recorded by KPFM on surfaces of insulating and semiconducting samples, have stimulated theoretical attempts to explain such…
Kelvin probe microscopy (KPFM) is a well-established scanning probe technique, used to measure surface potential accurately; it has found extensive use in the study of a range of materials phenomena. In its conventional form, KPFM…
An analytical model of the electrostatic force between the tip of a non-contact Atomic Force Microscope (nc-AFM) and the (001) surface of an ionic crystal is reported. The model is able to account for the atomic contrast of the local…
Measurements of the Casimir force require the elimination of electrostatic interactions between the surfaces. However, due to electrostatic patch potentials, the voltage required to minimize the total force may not be sufficient to…
In 2D field effect transistors the gate electrostatically dopes the 2D semiconductor (2DSC) channel, tuning the Fermi level. In principle, Kelvin probe force microscopy (KPFM) can detect the Fermi level, and its dependence on gate bias as…
Kelvin Probe Force Microscopy (KPFM) is widely used to measure the surface potential on samples, from which electrostatic patch force can be calculated. However, since the KPFM measurements represent a weighted average of local potentials…
Kelvin probe force microscopy (KPFM) is a powerful tool for studying contact electrification, using an tiny tip to image voltages caused by transferred charge. It has been used in stationary studies focused on finding patterns (e.g.…
Noncontact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy (KPFM) have become important tools for nanotechnology; however, their contrast mechanisms on the atomic scale are not entirely understood. Here we used chlorine…
We investigate the dependency of electrostatic interaction forces on applied potentials in Electrostatic Force Microscopy (EFM) as well as in related local potentiometry techniques like Kelvin Probe Microscopy (KPM). The approximated…
Kelvin probe force microscopy at normal pressure was performed by two different groups on the same Au-coated planar sample used to measure the Casimir interaction in a sphere-plane geometry. The obtained voltage distribution was used to…
Kelvin probe force microscopy (KPFM) adapts an atomic force microscope to measure electric potential on surfaces at nanometer length scales. Here we demonstrate that Heterodyne-KPFM enables scan rates of several frames per minute in air,…
Kelvin probe force microscopy (KPFM) is a powerful tool for studying contact electrification at the nanoscale, but converting KPFM voltage maps to charge density maps is non-trivial due to long-range forces and complex system geometry. Here…
High-quality spatially-resolved measurements of electric fields are critical to understanding charge injection, charge transport, and charge trapping in semiconducting materials. Here, we report a variation of frequency-modulated Kelvin…
We report a new experimental technique for Kelvin probe force microscopy (KPFM) using the dissipation signal of frequency modulation atomic force microscopy for bias voltage feedback. It features a simple implementation and faster scanning…
The scanning Kelvin probe is a tool that allows for the contactless evaluation of contact potential differences in a range of materials, permitting the indirect determination of surface properties such as work function or Fermi levels. In…
We review a new implementation of Kelvin probe force microscopy (KPFM) in which the dissipation signal of frequency modulation atomic force microscopy (FM-AFM) is used for dc bias voltage feedback (D-KPFM). The dissipation arises from an…