相关论文: Electric dipole spin resonance in systems with a v…
We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies…
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…
We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…
The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…
Electric dipole spin resonance is studied theoretically at a shallow donor formed in a nanowire with spin-orbit coupling in a magnetic field. Such system may represent a donor-based qubit. The single discrete energy level of the donor is…
A recently discovered mechanism of electric dipole spin resonance, mediated by the hyperfine interaction, is investigated experimentally and theoretically. The effect is studied using a spin-selective transition in a GaAs double quantum…
The spin-orbit coupling (SOC) can mediate electric-dipole spin resonance (EDSR) in an a.c. electric field. In this letter, the EDSR is essentially understood as an spin precession under an effective a.c. magnetic field induced by the SOC in…
The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field…
We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal dichalcogenide monolayer defined by electrostatic gating. Transition-metal dichalcogenides provide an interesting and promising arena for…
We study the spin relaxation in a single-electron bilayer graphene quantum dot due to the spin-orbit coupling. The spin relaxation is assisted by the emission of acoustic phonons via the bond-length change and deformation potential…
An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast to the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…
Coherent control of individual atomic and molecular spins on surfaces has recently been demonstrated by using electron spin resonance (ESR) in a scanning tunneling microscope (STM). Here we present a combined experimental and modeling study…
We study the singlet-triplet relaxation due to the spin-orbit coupling assisted by the electron-phonon scattering in two-electron SiGe/Si/SiGe double quantum dots in the presence of an external magnetic field in either Faraday or Voigt…
The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most…
We investigate relaxation and dephasing of an electron spin confined in a semiconductor quantum dot and subject to spin-orbit coupling. Even in vanishing magnetic field, B = 0, slow noise coupling to the electron's orbital degree of freedom…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
The effect of a gate voltage ($V_g$) on the spin-splitting of an electronic level in a quantum dot (QD) attached to ferromagnetic leads is studied in the Kondo regime using a generalized numerical renormalization group technique. We find…
Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings…