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Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…

介观与纳米尺度物理 · 物理学 2020-05-20 Olya A. Ilinskaya , Danko Radic , Hee Chul Park , Ilya V. Krive , Robert I. Shekhter , Mats Jonson

There is significant current interest in spintronic devices fashioned after a spin analog of the electro-optic modulator proposed by Datta and Das [Appl. Phys. Lett., \underline{56}, 665 (1990)]. In their modulator, the ``modulation'' of…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Bandyopadhyay , M. Cahay

A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons…

介观与纳米尺度物理 · 物理学 2016-03-23 P. Wójcik , J. Adamowski

We demonstrated theoretically that the renormalization of the electron energy spectrum near the Dirac point of graphene by a strong high-frequency electromagnetic field (dressing field) drastically depends on polarization of the field.…

介观与纳米尺度物理 · 物理学 2016-02-04 K. Kristinsson , O. V. Kibis , S. Morina , I. A. Shelykh

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…

材料科学 · 物理学 2009-11-07 Z. G. Yu , M. E. Flatte

A recently published report in the journal Science claims that the Datta-Das Spin Field Effect Transistor has been demonstrated because an exact agreement was found between the voltage modulation in a fabricated structure and a theoretical…

介观与纳米尺度物理 · 物理学 2009-11-03 Supriyo Bandyopadhyay

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to…

介观与纳米尺度物理 · 物理学 2015-05-19 J. Wunderlich , B. G. Park , A. C. Irvine , L. P. Zarbo , E. Rozkotova , P. Nemec , V. Novak , Jairo Sinova , T. Jungwirth

We propose two schemes of a novel spin-optronic device, optical analog of Datta and Das spin transistor for the electrons. The role of ferromagnetic contacts is played by one-dimensional polariton channels with strong TE-TM splitting. A…

介观与纳米尺度物理 · 物理学 2015-05-19 I. A. Shelykh , R. Johne , D. D. Solnyshkov , G. Malpuech

We developed the theory of electronic properties of semiconductor quantum rings with the Rashba spin-orbit interaction irradiated by an off-resonant high-frequency electromagnetic field (dressing field). Within the Floquet theory of…

介观与纳米尺度物理 · 物理学 2018-04-30 V. K. Kozin , I. V. Iorsh , O. V. Kibis , I. A. Shelykh

Spintronics devices rely on spin-dependent transport behavior evoked by the presence of spin-polarized electrons. Transport through nanostructures, on the other hand, is dominated by strong Coulomb interaction. We study a model system in…

介观与纳米尺度物理 · 物理学 2018-05-09 Jürgen König , Jan Martinek , Jozef Barnas , Gerd Schön

Controlling the flow of electrons by manipulation of their spin is a key to the development of spin-based electronics. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at…

介观与纳米尺度物理 · 物理学 2012-12-14 Luyi Yang , J. D. Koralek , J. Orenstein , D. R. Tibbetts , J. L. Reno , M. P. Lilly

A device enabling mechanically-controlled spin and electric transport in mesoscopic structures is proposed. It is based on the transfer of electrons through weak links formed by suspended nanowires, on which the charge carriers experience a…

介观与纳米尺度物理 · 物理学 2014-07-09 R. I. Shekhter , O. Entin-Wohlman , A. Aharony

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…

材料科学 · 物理学 2017-03-07 Fan Li , Cheng Song , Bin Cui , Jingjing Peng , Youdi Gu , Guangyue Wang , Feng Pan

A Datta-Das spin field-effect transistor is built of a heterostructure with a Rashba spin-orbit interaction (SOI) at the interface (or quantum well) separating two possibly magnetized reservoirs. The particle and spin currents between the…

介观与纳米尺度物理 · 物理学 2020-10-01 K. Sarkar , A. Aharony , O. Entin-Wohlman , M. Jonson , R. I. Shekhter

We calculate spin transport in two-dimensional waveguides in the presence of spatially modulated Zeeman-split energy bands. We show that in a regime where the spin evolution is predominantly adiabatic the spin backscattering rate can be…

介观与纳米尺度物理 · 物理学 2012-10-16 Henri Saarikoski , Tobias Dollinger , Klaus Richter

It is revealed that in spin helix state of (001) quantum well system, strong suppression of D'yakonov-Perel' spin relaxation process occurs by an interplay between Rashba and Dresselhaus couplings over a wide range of Rashba coupling…

其他凝聚态物理 · 物理学 2009-11-13 Munekazu Ohno , Kanji Yoh

We investigate theoretically electron transfer in a doble dot in a situation where it is governed by nuclear magnetic field: This has been recently achieved in experiment. We show how to partially compensate the nuclear magnetic field to…

介观与纳米尺度物理 · 物理学 2009-11-11 Oleg N. Jouravlev , Yuli V. Nazarov

The photon spin is an important resource for quantum information processing as is the electron spin in spintronics. However, for subwavelength confined optical excitations, polarization as a global property of a mode cannot be defined.…

光学 · 物理学 2018-12-11 Enno Krauss , Gary Razinskas , Dominik Köck , Swen Grossmann , Bert Hecht

We develop a theory of spin-dependent phenomena in the streaming regime characterized by ballistic acceleration of electrons in the moderate electric field until they achieve the optical phonon energy and abruptly emit the phonons. It is…

介观与纳米尺度物理 · 物理学 2015-06-16 L. E. Golub , E. L. Ivchenko

Current interest in spintronics is largely motivated by a belief that spin based devices (e.g. spin field effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally…

介观与纳米尺度物理 · 物理学 2015-06-24 S. Bandyopadhyay , M. Cahay