相关论文: Complementary Skyrmion Racetrack Memory with Volta…
Nonlinear phenomena in physical systems can be used for brain-inspired computing with low energy consumption. Response from the dynamics of a topological spin structure called skyrmion is one of the candidates for such a neuromorphic…
The development of energy-efficient neuromorphic hardware using spintronic devices based on antiferromagnetic (AFM) skyrmion motion on nanotracks has gained considerable interest. Owing to its properties such as robustness against external…
We introduce a new class of primitive building blocks for realizing quantum logic elements based on nanoscale magnetization textures called skyrmions. In a skyrmion qubit, information is stored in the quantum degree of helicity, and the…
Spin pumping is a widely recognized method to generate the spin current in the spintronics, which is acknowledged as a fundamentally dynamic process equivalent to the spin-transfer torque. In this work, we theoretically verify that the…
Recently, there has been substantial interest in realizations of skyrmions, in particular in 2D systems due to increased stability resulting from reduced dimensionality. A stable skyrmion, representing the smallest realizable magnetic…
The emergence of a topologically nontrivial vortex-like magnetic structure, the magnetic skyrmion, has launched new concepts for memory devices. There, extensive studies have theoretically demonstrated the ability to encode information bits…
Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…
Magnetic skyrmions are small swirling topological defects in the magnetization texture stabilized by the protection due to their topology. In most cases they are induced by chiral interactions between atomic spins existing in…
Magnetic skyrmions are topological objects, which have recently been observed in thin films at room temperature. Sub 100-nm sizes and spin polarised current manipulation make them candidates for high density information storage and…
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate…
Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…
Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical…
In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…
Skyrmions, novel topologically stable spin vortices, hold promise for next-generation magnetic storage due to their nanoscale domains to enable high information storage density and their low threshold for current-driven motion to enable…
Ferromagnetic domain walls -transitional regions between magnetic domains- are an essential ingredient for racetrack memory, a device concept that promises to deliver faster and more compact memory storage compared to other non-volatile…
Current-induced motion of domain walls (CIMDW) with interfacial Dzyaloshinskii-Moriya interaction (DMI) in heavy metal (HM)/ferromagnetic (FM) metal multilayers have attracted attention owing to their potential application in novel magnetic…
Spintronics is an important emerging technology for data storage and computation. In this field, magnetic skyrmion-based devices are attractive due to their small size and energy consumption. However, controlling the creation, deletion and…
We propose a novel binary and quaternary memory device based upon skyrmion states induced by the oblique field in a square magnetic island. To describe stable states and dynamics of the skyrmion, we employ the lattice model that uses the…
Antiferromagnetic (AFM) skyrmions have emerged as a highly promising avenue in the realm of spintronics, particularly for the development of advanced racetrack memory devices. A distinguishing feature of AFM skyrmions is their zero…
This work proposes a switched model reference adaptive control (S-MRAC) architecture for a multi-input multi-output (MIMO) switched linear system with memory for enhanced learning. A salient feature of the proposed method that separates it…