相关论文: Investigating the Temperature Effects on Resistive…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
Temperature dependence of Fano resonance, recently discovered in infra-red (IR spectra of nanodiamonds synthesized from chloroadamantane at high static pressures, is investigated. For the first time, marked variations of the resonance…
Simulations have been carried out to establish how electron thermal physics, introduced in the form of a dynamic electron temperature, affects isolated filament motion and dynamics in 3D. It is found that thermal effects impact filament…
Thermal effects are well known to influence the electronic and optical properties of materials through several physical mechanisms and are the basis for various optoelectronic devices. The thermo-optic (TO) effect - the refractive index…
Materials such as W, TiN, and SrRuO3 (SRO) have been suggested as promising alternatives to Au and Ag in plasmonic applications owing to their refractory properties. However, investigation of the reproducibility of the optical properties…
In recent years, Raman spectroscopy of two-dimensional (2D) materials has been conducted. However, only a small portion of those studies note the full width half maximum (FWHM) of these 2D materials. FWHM is an indicator of phonon…
Studies of interlayer transport in layered metals have generally made use of zero temperature conductivity expressions to analyze angle-dependent magnetoresistance oscillations (AMRO). However, recent high temperature AMRO experiments have…
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…
Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…
We consider films and filaments of nanoscale thickness on thermally conductive substrates exposed to external heating. Particular focus is on metal films exposed to laser irradiation. Due to short length scales involved, the absorption of…
Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…
At the lowest temperatures achieved in dilution refrigerators, ruthenium oxide resistance thermometers often saturate and therefore lose their sensitivity. In an effort to extend the range of such temperature sensors, we built a thermometer…
The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in Zn1-xMnxO type system. Zn1-xMnxO (x = 0.02, 0.04) samples have been synthesized by solid-state…
Knowledge of the electronic band structure of multiferroic oxides, crucial for the understanding and tuning of photo-induced effects, remains very limited even in the model and thoroughly studied BiFeO3. Here, we investigate the electronic…
In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a…
The authors report on the interplay between magnetically ordered phases with temperature and magnetic field across compressively strained interfaces of thin La0.67Sr0.33MnO3 films on LaAlO3 substrates. From the temperature dependence of the…
The temperature dependence of the asymmetry between Stokes and anti-Stokes Raman scattering can be exploited for self-calibrating, optically-based thermometry. In the context of cavity optomechanics, we observe the cavity-enhanced…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
We investigate how a temperature reduction in z-direction influences the switching probability and the noise in heat-assisted magnetic recording (HAMR) for a bit in bit-patterned media with dimensions d=5nm and h=10nm. Pure hard magnetic…