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相关论文: Charge carrier coherence and Hall effect in organi…

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We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and…

材料科学 · 物理学 2009-11-11 V. Podzorov , E. Menard , J. A. Rogers , M. E. Gershenson

In this paper, we develop a unified theory for describing Hall effect in various electronic systems based on a pure electron picture (without the hole concept). We argue that the Hall effect is the magnetic field induced symmetry breaking…

强关联电子 · 物理学 2009-01-26 X. Q. Huang

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…

材料科学 · 物理学 2009-11-11 J. Takeya , K. Tsukagoshi , Y. Aoyagi , T. Takenobu , Y. Iwasa

We have investigated the charge carrier transport in organic molecular semiconductors. It has been found that mobility is a function of electric field and temperature due to hopping conduction. Several theoretical models for charge…

材料科学 · 物理学 2007-05-23 Ajit Kumar Mahapatro , Subhasis Ghosh

General properties of the transport of charge carriers (electrons and holes) in disordered organic materials are discussed. It was demonstrated that the dominant part of the total energetic disorder in organic material is usually provided…

材料科学 · 物理学 2013-03-20 S. V. Novikov

We present a model of charge transport in organic molecular semiconductors based on the effects of lattice fluctuations on the quantum coherence of the electronic state of the charge carrier. Thermal intermolecular phonons and librations…

其他凝聚态物理 · 物理学 2009-11-11 J. -D. Picon , M. N. Bussac , L. Zuppiroli

We establish a universal theory to understand quasiparticle Hall effects and transverse charge-carrier transport in organic semiconductors. The simulations are applied to organic crystals inspired by rubrene and cover multiple transport…

材料科学 · 物理学 2024-08-21 Michel Panhans , Frank Ortmann

Computer simulation of the hopping charge transport in disordered organic materials has been carried out explicitly taking into account charge-charge interactions. This approach provides a possibility to take into account dynamic…

无序系统与神经网络 · 物理学 2015-05-13 Sergey V. Novikov

We calculate the Hall transport in a multiband systems with a dominant interband interaction between carriers having electron and hole character. We show that this situation gives rise to an unconventional scenario, beyond the Boltzmann…

强关联电子 · 物理学 2012-08-28 L. Fanfarillo , E. Cappelluti , C. Castellani , L. Benfatto

We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN…

应用物理 · 物理学 2025-01-27 Joseph E. Dill , Chuan F. C. Chang , Debdeep Jena , Huili Grace Xing

The dynamic disorder model for charge carrier transport in organic semiconductors has been extensively studied in recent years. Although it is successful on determining the value of bandlike mobility in the organic crystalline materials,…

材料科学 · 物理学 2012-06-21 Yao Yao , Wei Si , Xiaoyuan Hou , Chang-Qin Wu

We explore the charge transport mechanism in organic semiconductors based on a model that accounts for the thermal intermolecular disorder at work in pure crystalline compounds, as well as extrinsic sources of disorder that are present in…

材料科学 · 物理学 2012-12-10 S. Ciuchi , S. Fratini

Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift…

材料科学 · 物理学 2023-07-12 Tianqi Deng , Deren Yang , Xiaodong Pi

Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…

介观与纳米尺度物理 · 物理学 2007-09-18 Hans-Andreas Engel , Emmanuel I. Rashba , Bertrand I. Halperin

We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…

介观与纳米尺度物理 · 物理学 2009-10-31 David H. Cobden , C. H. W. Barnes , C. J. B. Ford

A universal mechanism for strong magnetic-field effects of nonmagnetic organic semiconductors is presented. A weak magnetic field (less than hundreds mT) can substantially change the charge carrier hopping coefficient between two…

介观与纳米尺度物理 · 物理学 2010-06-29 X. R. Wang , S. J. Xie

In high-quality solid-state systems at low temperatures, the hydrodynamic or the ballistic regimes of heat and charge transport are realized in the electron and the phonon systems. In these regimes, the thermal and the electric conductance…

介观与纳米尺度物理 · 物理学 2019-09-18 P. S. Alekseev , M. A. Semina

Metals with values of the resistivity and the Hall coefficient much larger than typical ones, e.g., of sodium, are called semimetals. We suggest a model for semimetals which takes into account the strong Coulomb repulsion of the charge…

强关联电子 · 物理学 2009-10-31 Stefan Blawid

A universal mechanism for strong magnetic-field effects of nonmagnetic organic semiconductors is presented. A weak magnetic field (less than hundreds mT) can substantially change the charge carrier hopping coefficient between two…

介观与纳米尺度物理 · 物理学 2015-05-14 X. R. Wang , S. J. Xie

We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hall…

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