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相关论文: Defect-impurity complex induced long-range ferroma…

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We study the structure, the formation and binding energies and the transfer levels of the zinc-phosphorus vacancy complex [Zn_In - V_P] in Zn doped p-type InP, as a function of the charge, using plane wave ab initio DFT-LDA calculations in…

凝聚态物理 · 物理学 2009-11-10 C. W. M. Castleton , S. Mirbt

Using atomistic quantum simulation based on a tight binding model, we investigate the formation of energy gap Eg of graphene nanomesh (GNM) lattices and the transport characteristics of GNM-based electronic devices (single potential barrier…

介观与纳米尺度物理 · 物理学 2013-06-11 Viet Hung Nguyen , Mai Chung Nguyen , Huy Viet Nguyen , Philippe Dollfus

We present a systematic investigation of native point defects and oxygen impurities in GaAs using hybrid functional calculations. Defects are characterized by their structural, electronic, and optical properties. Under thermodynamic…

材料科学 · 物理学 2026-03-10 Khang Hoang

The magnetic and electronic structures of $3d$ impurity atoms from Sc to Zn in ferromagnetic body-centered cubic iron are investigated using the all-electron full-potential linearized augmented plane-wave method based on the generalized…

材料科学 · 物理学 2010-05-25 Gul Rahman , In Gee Kim , H. K. D. H. Bhadeshia , Arthur J. Freeman

The self-interaction corrected local spin-density approximation is used to investigate the ground-state valency configuration of transition metal (TM=Mn, Co) impurities in p-type ZnO. Based on the total energy considerations, we find a…

强关联电子 · 物理学 2007-05-23 L. Petit , T. C. Schulthess , A. Svane , Z. Szotek , W. M. Temmerman , A. Janotti

The minimum energy paths for the migration of interstitial Mg in wurtzite GaN are studied through density functional calculations. The study also comprises Li, Na, and Be dopants to examine the dependence on size and charge of the dopant…

材料科学 · 物理学 2017-10-11 Giacomo Miceli , Alfredo Pasquarello

We present a computational study of individual and pairs of substitutional Mn impurities on the (110) surface of GaAs samples based on density functional theory. We focus on the anisotropy properties of these magnetic centers and their…

强关联电子 · 物理学 2011-08-29 M. Fhokrul Islam C. M. Canali

We propose a new mechanism of indirect exchange interaction, which can be responsible for the ferromagnetic ordering in Mn-doped semiconductors (like GaMnAs) at low carrier concentration. The mechanism is based on the interplay of the…

材料科学 · 物理学 2007-05-23 V. K. Dugaev , V. I. Litvinov , J. Barnas , M. Vieira

Extreme lattice-mismatched III-V nitrides, such as Bi-incorporated GaN, have been realized experimentally thanks to recent advances in epitaxial growth and characterization techniques. However, theoretical insights into defect-related…

材料科学 · 物理学 2025-07-03 Yujie Liu , Ishtiaque Ahmed Navid , Zetian Mi , Emmanouil Kioupakis

Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)-…

The magnetic properties of zig-zag graphene nanoflakes (ZGNF) are investigated within the framework of the dynamical mean-field theory. At half-filling and for realistic values of the local interaction, the ZGNF is in a fully compensated…

强关联电子 · 物理学 2016-12-30 A. Valli , A. Amaricci , A. Toschi , T. Saha-Dasgupta , K. Held , M. Capone

We investigate the effect of basal-plane stacking faults on the structural, electronic, and polarization properties of wurtzite GaN and ZnO. This theoretical study is performed within density-functional theory (DFT) using periodic hexagonal…

First-principles simulations have been performed for [001]-ordered Mn/Ge and Mn/GaAs "digital alloys", focusing on the effects of i) a larger band-gap and ii) a different semiconducting host on the electronic structure of the magnetic…

材料科学 · 物理学 2007-05-23 S. Picozzi , M. Lezaic , S. Blügel

A number of diverse bulk properties of the zincblende and wurtzite III-V nitrides AlN, GaN, and InN, are predicted from first principles within density functional theory using the plane-wave ultrasoft pseudopotential method, within both the…

材料科学 · 物理学 2009-10-31 A. Zoroddu , F. Bernardini , P. Ruggerone , V. Fiorentini

We propose a multilayer device comprising of a thin-film-based ferromagnetic hetero-structure (FMH) deposited on a diamond layer doped with nitrogen vacancy centers (NVC's). We find that when the NVC's are in close proximity (1-2 nm) with…

介观与纳米尺度物理 · 物理学 2016-12-26 Cong Son Ho , Seng Ghee Tan , Mansoor B. A. Jalil , Zilong Chen , Leonid A. Krivitsky

The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe$_3$GeTe$_2$ (FGT) can be largely…

We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below…

强关联电子 · 物理学 2009-11-13 J. -H. Chung , S. J. Chung , Sanghoon Lee , B. J. Kirby , J. A. Borchers , Y. J. Cho , X. Liu , J. K. Furdyna

Due to the wide range of possible applications, atomically thin two-dimensional heterostructures have attracted much attention. In this work, using first-principles calculations, we investigated the structural and electronic properties of…

We investigate magnetic, charge and transport properties of hexagonal graphene nanoflakes (GNFs) connected to two metallic leads by using the functional renormalization group (fRG) method. The interplay between the on-site and long-range…

强关联电子 · 物理学 2021-12-30 V. S. Protsenko , A. A. Katanin

We have investigated STM images of the (110) cross-sectional surface of Mn-doped GaAs using first principles total-energy pseudopotential calculations. We focus on configurations with Mn interstitial in the uppermost surface layers. In…

材料科学 · 物理学 2011-12-30 A. Stroppa , M. Peressi