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相关论文: Doping-Induced Ferromagnetism and Possible Triplet…

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We investigate the electronic structure and magnetic properties of a $J_\text{eff} = 1/2$ iridate Ca$_4$IrO$_6$ and the implications of doping electrons and holes using ab initio density functional theory. Our calculations considering…

强关联电子 · 物理学 2022-09-02 Avishek Singh , Jayita Chakraborty , Nirmal Ganguli

Sr2IrO4 is an archetypal spin-orbit-coupled Mott insulator with an antiferromagnetic state below 240 K. Here we report results of our study on single crystals of Sr2Ir1-xFexO4 (0<x<0.32) and Sr2Ir1-xCoxO4 (0<x<0.22). Fe doping retains the…

强关联电子 · 物理学 2020-12-21 Bing Hu , Hengdi Zhao , Yu Zhang , Pedro Schlottmann , Feng Ye , Gang Cao

Mott insulators based on $4d$ and $5d$ transition-metal ions, where spin-orbit interaction plays a key role, can exhibit various forms of unusual magnetism. A particular example is the antiferromagnet Ca$_2$RuO$_4$ containing $d^4$…

强关联电子 · 物理学 2025-05-16 Jan Revenda , Krzysztof Wohlfeld , Jiří Chaloupka

Significant efforts have been dedicated to achieving excitonic insulators. In this paper, we explore a new problem of doping excitons into a Mott insulator instead of a band insulator. Specifically, we start with a Mott insulator on a…

强关联电子 · 物理学 2024-07-16 Hui Yang , Ya-Hui Zhang

We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a…

强关联电子 · 物理学 2015-06-16 Arti Garg , H. R. Krishnamurthy , Mohit Randeria

Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems'…

Strontium doping transforms manganites of type La(1-x)Sr(x)MnO(3) from an insulating antiferromagnet (x=0) to a metallic ferromagnet (x>0.16) due to the induced charge carriers (holes). Neutron scattering experiments were employed to…

材料科学 · 物理学 2017-03-21 A. Furrer , A. Podlesnyak , E. Pomjakushina , V. Pomjakushin

We study the effects of doping a Mott insulator on the honeycomb lattice where spins interact via direction dependent Kitaev couplings J_K, and weak antiferromagnetic Heisenberg couplings J. This model is known to have a spin liquid ground…

强关联电子 · 物理学 2012-08-30 Yi-Zhuang You , Itamar Kimchi , Ashvin Vishwanath

We have used a combination of resonant magnetic x-ray scattering (RMXS) and x-ray absorption spectroscopy (XAS) to investigate the properties of the doped spin-orbital Mott insulator Sr2Ir(1-x)Rh(x)O4 (0.07 < x < 0.70). We show that…

强关联电子 · 物理学 2014-02-12 J. P. Clancy , A. Lupascu , H. Gretarsson , Z. Islam , Y. F. Hu , D. Casa , C. S. Nelson , S. C. Lamarra , G. Cao , Young-June Kim

Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature…

Based on a microscopic theoretical study, we show that novel superconductivity is induced by carrier doping in layered perovskite Ir oxides where a strong spin-orbit coupling causes an effective total angular momentum J_{eff}=1/2 Mott…

超导电性 · 物理学 2013-01-14 Hiroshi Watanabe , Tomonori Shirakawa , Seiji Yunoki

Spin-orbit Mott insulators composed of $t_{2g}^4$ transition metal ions may host excitonic magnetism due to the condensation of spin-orbital $J=1$ triplons. Prior experiments suggest that the $4d$ antiferromagnet Ca$_{2}$RuO$_{4}$ embodies…

Moir\'e heterostructures of transition metal dichalcogenides exhibit Mott-insulating behaviour both at half-filling as well as at fractional fillings, where electronic degrees of freedom form self-organized Wigner crystal states. An open…

强关联电子 · 物理学 2024-01-31 Urban F. P. Seifert , Leon Balents

Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interests especially for their electron-doped states. However, previous experiments are largely limited…

Understanding ferromagnetism mechanism in doped Mott insulators on frustrated lattices remains challenging at intermediate coupling and finite doping. Here, we study the itinerant ferromagnetism and propose its mechanism in doped Mott…

强关联电子 · 物理学 2025-11-04 Qianqian Chen , Shuai A. Chen , Zheng Zhu

The layered 5d transition metal oxide Sr2IrO4 has been shown to host a novel Jeff=1/2 Mott spin orbit insulating state with antiferromagnetic ordering, leading to comparisons with the layered cuprates. Here we study the effect of…

强关联电子 · 物理学 2015-03-20 S. Calder , G. -X. Cao , M. D. Lumsden , J. W. Kim , Z. Gai , B. C. Sales , D. Mandrus , A. D. Christianson

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

$Na_xCoO_2$ has a fascinating and complex magnetic phase diagram that can be further manipulated by doping. Here, we investigated the effect of electron doping on the magnetic coupling among $Co^{4+}$ ions in $Na_xCoO_2$ using density…

材料科学 · 物理学 2019-10-11 M. H. N. Assadi , S. Li , R. K. Zheng , S. P. Ringer , A. B. Yu

We study an effective one-dimensional (1D) orbital t-J model derived for strongly correlated e_g electrons in doped manganites. The ferromagnetic spin order at half filling is supported by orbital superexchange prop. to J which stabilizes…

强关联电子 · 物理学 2009-11-11 M. Daghofer , A. M. Oles , W. von der Linden

Some well-established examples of itinerant-electron ferromagnetism in one dimension occur in a Mott-insulating phase. We examine the consequences of doping a ferromagnetic insulator and cou- pling magnons to gapless charge fluctuations.…

强关联电子 · 物理学 2015-04-28 Hudson Pimenta , Luiz N. Oliveira , Rodrigo G. Pereira
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