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相关论文: Resonant electron scattering by graphene antidot

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The edges of graphene and graphene like systems can host localized states with evanescent wave function with properties radically different from those of the Dirac electrons in bulk. This happens in a variety of situations, that are…

介观与纳米尺度物理 · 物理学 2016-09-20 J. L. Lado , N. Garcia-Martinez , J. Fernandez-Rossier

The high-order harmonic generation in finite topological nanoribbons is investigated using a tight-binding description. The ribbons consist of hexagons and are almost one-dimensional. Two edge states emerge at the short edges of the ribbon…

介观与纳米尺度物理 · 物理学 2024-03-12 Hannah Jürß , Dieter Bauer

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number…

介观与纳米尺度物理 · 物理学 2012-11-21 Kikuo Harigaya , Hiroshi Imamura , Katsunori Wakabayashi , Osman Ozsoy

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized…

介观与纳米尺度物理 · 物理学 2009-03-10 F. Molitor , A. Jacobsen , C. Stampfer , J. Guettinger , T. Ihn , K. Ensslin

The distribution of net electric charge in graphene is investigated, using both a constitutive atomic charge-dipole interaction model and an approximate analytical solution to Laplace's equation. We demonstrate a strong size dependence of…

介观与纳米尺度物理 · 物理学 2009-09-21 Zhao Wang , Robert W. Scharstein

We investigate the effects of long-range potential fluctuations and electron-electron interactions on electronic and magnetic properties of graphene nanoribbons with zigzag edges using an extended mean-field Hubbard model. We show that…

介观与纳米尺度物理 · 物理学 2016-01-19 H. U. Özdemir , A. Altıntaş , A. D. Güçlü

The stability of graphene nanoribbons in the presence of typical atmospheric molecules is systematically investigated by means of density functional theory. We calculate the edge formation free energy of five different edge configurations…

介观与纳米尺度物理 · 物理学 2015-05-19 M. Vanin , J. Gath , K. S. Thygesen , K. W. Jacobsen

Plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light, which forms the fundamental basis of many cutting-edge industrial…

偏微分方程分析 · 数学 2022-01-03 Youjun Deng , Hongyu Liu , Guang-hui Zheng

Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied…

凝聚态物理 · 物理学 2009-10-31 E. Menendez-Proupin , J. L. Pena , C. Trallero-Giner

We investigated the atomic structures, Raman spectroscopic and electrical transport properties of individual graphene nanoribbons (GNRs, widths ~10-30 nm) derived from sonochemical unzipping of multi-walled carbon nanotubes (MWNTs).…

材料科学 · 物理学 2011-06-21 Liming Xie , Hailiang Wang , Chuanhong Jin , Xinran Wang , Liying Jiao , Kazu Suenaga , Hongjie Dai

Spectral and transport properties of electrons in confined phosphorene systems are investigated in a five hopping parameter tight-binding model, using analytical and numerical techniques. The main emphasis is on the properties of the…

介观与纳米尺度物理 · 物理学 2016-03-23 B. Ostahie , A. Aldea

We report on nano-infrared (IR) imaging studies of confined plasmon modes inside patterned graphene nanoribbons (GNRs) fabricated with high-quality chemical-vapor-deposited (CVD) graphene on Al2O3 substrates. The confined geometry of these…

介观与纳米尺度物理 · 物理学 2015-12-23 Z. Fei , M. D. Goldflam , J. -S. Wu , S. Dai , M. Wagner , A. S. McLeod , M. K. Liu , K. W. Post , S. Zhu , G. C. A. M. Janssen , M. M. Fogler , D. N. Basov

Using first-principles density-functional theory, we study the electronic structure of multilayer graphene nanoribbons as a function of the ribbon width and the external electric field, applied perpendicular to the ribbon layers. We…

材料科学 · 物理学 2015-05-19 Bhagawan Sahu , Hongki Min , Sanjay K. Banerjee

Novel physical properties have been reported recently by stacking graphene-like systems in different configurations. Here, we explore the nature of emergent localized states at the edges of twisted bilayer graphene nanoribbons. Based on an…

其他凝聚态物理 · 物理学 2025-05-13 Kevin J. U. Vidarte , A. B. Felix , A. Latgé

Coulomb interaction has important consequences on the physics of quantum spin Hall edge states, weakening the topological protection via two-particle scattering and renormalizing both the velocity and charge of collective plasmon modes…

介观与纳米尺度物理 · 物理学 2021-01-04 Alexandre Gourmelon , Hiroshi Kamata , Jean-Marc Berroir , Gwendal Fève , Bernard Plaçais , Erwann Bocquillon

Magnetic confinement in graphene has been of recent and growing interest because its potential applications in nanotechnology. In particular, the observation of the so called magnetic edge states in graphene has opened the possibility to…

介观与纳米尺度物理 · 物理学 2010-08-31 Gabriela Murguia

The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nano-scale electric…

Graphene properties can be manipulated by a periodic potential. Based on the tight-binding model, we study graphene under a one-dimensional (1D) modulated magnetic field which contains both a uniform and a staggered component. New chiral…

强关联电子 · 物理学 2011-01-18 Lei Xu , Jin An , Chang-De Gong

Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room…

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron…

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