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There is an ongoing debate about the relative importance of structural change versus doping charge carriers on the mechanism of superconductivity in Fe-based materials. Elucidating this issue is a major challenge since it would require a…

A general feature of unconventional superconductors is the existence of a superconducting dome in the phase diagram as a function of carrier concentration. For the simplest iron-based superconductor FeSe (with transition temperature Tc ~ 8…

The latest discovery of high temperature superconductivity signature in single-layer FeSe is significant because it is possible to break the superconducting critical temperature ceiling (maximum Tc~55 K) that has been stagnant since the…

The superconducting transition temperature, $T_{\rm{c}}$, of FeSe can be significantly enhanced several-fold by applying pressure, electron doping, intercalating spacing layer, and reducing dimensionality. Various ordered electronic phases,…

The FeSe superconductor and its related systems have attracted much attention in the iron-based superconductors owing to their simple crystal structure and peculiar electronic and physical properties. The bulk FeSe superconductor has a…

超导电性 · 物理学 2015-06-24 Xu Liu , Lin Zhao , Shaolong He , Junfeng He , Defa Liu , Daixiang Mou , Bing Shen , Yong Hu , Jianwei Huang , X. J. Zhou

A superconducting transition temperature Tc as high as 100 K was recently discovered in 1 monolayer (1ML) FeSe grown on SrTiO3 (STO). The discovery immediately ignited efforts to identify the mechanism for the dramatically enhanced Tc from…

超导电性 · 物理学 2016-04-27 J. J. Seo , B. Y. Kim , B. S. Kim , J. K. Jeong , J. M. Ok , J. S. Kim , J. D. Denlinger , C. Kim , Y. K. Kim

In contrast to its bulk crystals, the FeSe film or layer exhibits better superconductivity performance, which attract much interest in its fundamental research as well as potential application. In present work, transition from insulator to…

超导电性 · 物理学 2017-03-27 Wenbin Qiu , Zongqing Ma , Yongchang Liu , Xiaolin Wang , Shi Xue Dou

FeSe is a unique superconductor that can be manipulated to enhance its superconductivity using different routes while its monolayer form grown on different substrates reaches a record high temperature for a two-dimensional system. In order…

Iron selenide (FeSe) - the structurally simplest iron-based superconductor, has attracted tremendous interest in the past years. While the transition temperature (Tc) of bulk FeSe is $\sim$ 8 K, it can be significantly enhanced to 40 - 50 K…

It is thought that strong electron correlation in an insulating parent phase would enhance a critical temperature (Tc) of superconductivity in a doped phase via enhancement of the binding energy of a Cooper pair as known in high-Tc…

超导电性 · 物理学 2016-04-14 Kota Hanzawa , Hikaru Sato , Hidenori Hiramatsu , Toshio Kamiya , Hideo Hosono

Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped…

超导电性 · 物理学 2017-05-31 C. S. Zhu , J. H. Cui , B. Lei , N. Z. Wang , C. Shang , F. B. Meng , L. K. Ma , X. G. Luo , T. Wu , Z. Sun , X. H. Chen

The importance of electron-hole interband interactions is widely acknowledged for iron-pnictide superconductors with high transition temperatures (Tc). However, high-Tc superconductivity without hole carriers has been suggested in FeSe…

The origin of enhanced superconductivity over 50 K in the recently discovered FeSe monolayer films grown on SrTiO$_{3}$ (STO), as compared to 8 K in bulk FeSe, is intensely debated. As with the ferrochalcogenides A$_{x}$Fe$_{2-y}$Se$_{2}$…

超导电性 · 物理学 2017-04-25 X. Shi , Z. -Q. Han , X. -L. Peng , P. Richard , T. Qian , X. -X. Wu , M. -W. Qiu , S. C. Wang , J. P. Hu , Y. -J. Sun , H. Ding

Bulk FeSe is superconducting with a critical temperature $T_c$ $\cong$ 8 K and SrTiO$_3$ is insulating in nature, yet high-temperature superconductivity has been reported at the interface between a single-layer FeSe and SrTiO$_3$. Angle…

超导电性 · 物理学 2018-05-16 P. K. Biswas , Z. Salman , Q. Song , R. Peng , J. Zhang , L. Shu , D. L. Feng , T. Prokscha , E. Morenzoni

Recently, interface has been employed to enhance superconductivity in the single-layer FeSe films grown on SrTiO3(001)(STO) with a possible Tc of ~ 80 K, which is nearly ten times of the Tc of bulk FeSe and is above the Tc record of 56 K…

超导电性 · 物理学 2015-06-11 Jian-Feng Ge , Zhi-Long Liu , Canhua Liu , Chun-Lei Gao , Dong Qian , Qi-Kun Xue , Ying Liu , Jin-Feng Jia

We report a high-pressure study on the heavily electron doped Lix(NH3)yFe2Se2 single crystal by using the cubic anvil cell apparatus. The superconducting transition temperature Tc = 44 K at ambient pressure is first suppressed to below 20 K…

超导电性 · 物理学 2018-01-31 P. Shahi , J. P. Sun , S. S. Sun , Y. Y. Jiao , K. Y. Chen , S. H. Wang , H. C. Lei , Y. Uwatoko , B. S. Wang , J. -G. Cheng

Electronic properties of FeSe can be tuned by various routes. Here, we present a comprehensive study on the evolution of the superconductivity and nematicity in FeSe with thickness from bulk single crystal down to bilayer ($\sim$ 1.1 nm)…

超导电性 · 物理学 2021-08-04 C. S. Zhu , B. Lei , Z. L. Sun , J. H. Cui , M. Z. Shi , W. Z. Zhuo , X. G. Luo , X. H. Chen

Superconductivity in the cuprate superconductors and the Fe-based superconductors is realized by doping the parent compound with charge carriers, or by application of high pressure, to suppress the antiferromagnetic state. Such a rich phase…

As the simplest iron-based superconductor, FeSe forms a tetragonal structure with transition temperature Tc ~ 8 K. With assistance of pressure, or other techniques, Tc can be greatly enhanced, even to above liquid nitrogen temperature. The…

超导电性 · 物理学 2017-10-16 J. Zhang , F. L. Liu , T. P. Ying , N. N. Li , Y. Xu , L. P. He , X. C. Hong , Y. J. Yu , M. X. Wang , J. Shen , W. G. Yang , S. Y. Li

Stabilized FeSe thin films in ambient pressure with tunable superconductivity would be a promising candidate for superconducting electronic devices yet its superconducting transition temperature (Tc) is below 10 K in bulk materials. By…

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