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相关论文: B\"uttiker probes for dissipative phonon quantum t…

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The non-equilibrium Green's function (NEGF) method with B\"uttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the…

State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the…

An efficient and compact approach to the inclusion of dissipative effects in Non-Equilibrium Green's Function (NEGF) simulations of electronic systems is introduced. The algorithm is based on two well known methods in the literature,…

介观与纳米尺度物理 · 物理学 2018-03-07 Jesse A. Vaitkus , Jared H. Cole

We study the nonlinear elastic quantum electronic transport properties of nanoscopic devices using the Nonequilibrium Green's function (NEGF) method. The Green's function method allows us to expand the $I-V$ characteristics of a given…

介观与纳米尺度物理 · 物理学 2009-07-14 Alexis R. Hernández , Caio H. Lewenkopf

With the rapidly increasing integration density and power density in nanoscale electronic devices, the thermal management concerning heat generation and energy harvesting becomes quite crucial. Since phonon is the major heat carrier in…

介观与纳米尺度物理 · 物理学 2021-03-01 Zhizhou Yu , Guohuan Xiong , Lifa Zhang

The nonequilibrium Green's function (NEGF) method is often used to predict transport in atomistically resolved nanodevices and yields an immense numerical load when inelastic scattering on phonons is included. To ease this load, this work…

计算物理 · 物理学 2020-07-22 Daniel A. Lemus , James Charles , Tillmann Kubis

Thermal engineering of quantum devices has attracted much attention since the discovery of quantized thermal conductance of phonons. Although easily submerged in numerous excitations in macro-systems, quantum behaviors of phonons manifest…

材料科学 · 物理学 2020-10-02 Xiaobin Chen , Yizhou Liu , Wenhui Duan

The coherent quantum effect becomes increasingly important in the heat dissipation bottleneck of semiconductor nanoelectronics with the characteristic size shrinking down to few nano-meters scale nowadays. However, the quantum mechanical…

介观与纳米尺度物理 · 物理学 2020-11-18 Yangyu Guo , Marc Bescond , Zhongwei Zhang , Mathieu Luisier , Masahiro Nomura , Sebastian Volz

We present the detailed treatment of dissipative quantum transport in carbon nanotube field-effect transistors (CNTFETs) using the non-equilibrium Green's function formalism. The effect of phonon scattering on the device characteristics of…

介观与纳米尺度物理 · 物理学 2009-11-13 Siyuranga O. Koswatta , Sayed Hasan , Mark S. Lundstrom , M. P. Anantram , Dmitri E. Nikonov

Mode space approach has been used so far in NEGF to treat phonon scattering for computational efficiency. Here we perform a more rigorous quantum transport simulation in real space to consider interband scatterings as well. We show a…

介观与纳米尺度物理 · 物理学 2015-05-27 Youngki Yoon , Dmitri E. Nikonov , Sayeef Salahuddin

Phonon-phonon interaction is systematically studied by nonequilibrium Green's function (NEGF) formulism in momentum space at finite temperatures. Within the quasi-particle approximation, phonon frequency shift and lifetime are obtained from…

介观与纳米尺度物理 · 物理学 2009-11-13 Yong Xu , Jian-Sheng Wang , Wenhui Duan , Bing-Lin Gu , Baowen Li

This review deals with the nonequilibrium Green's function (NEGF) method applied to the problems of energy transport due to atomic vibrations (phonons), primarily for small junction systems. We present a pedagogical introduction to the…

介观与纳米尺度物理 · 物理学 2013-05-28 Jian-Sheng Wang , Bijay Kumar Agarwalla , Huanan Li , Juzar Thingna

We aim to provide engineers with an introduction to the non-equilibrium Green's function (NEGF) approach, which provides a powerful conceptual tool and a practical analysis method to treat small electronic devices quantum mechanically and…

介观与纳米尺度物理 · 物理学 2007-05-23 M. P. Anantram , M. S. Lundstrom , D. E. Nikonov

The understanding and modeling of inelastic scattering of thermal phonons at a solid/solid interface remain an open question. We present a fully quantum theoretical scheme to quantify the effect of anharmonic phonon-phonon scattering at an…

介观与纳米尺度物理 · 物理学 2021-05-26 Yangyu Guo , Zhongwei Zhang , Marc Bescond , Shiyun Xiong , Masahiro Nomura , Sebastian Volz

Quantum transport simulations are essential for understanding and designing nanoelectronic devices, yet the long-standing trade-off between accuracy and computational efficiency has limited their practical applications. We present…

介观与纳米尺度物理 · 物理学 2025-07-15 Jijie Zou , Zhanghao Zhouyin , Dongying Lin , Yike Huang , Linfeng Zhang , Shimin Hou , Qiangqiang Gu

A formalism for incorporating electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is applicable to planar MOSFETs is presented. Restructuring the NEGF equations in terms of approximate summation of…

介观与纳米尺度物理 · 物理学 2012-09-24 Himadri S. Pal , Dmitri E. Nikonov , Raseong Kim , Mark S. Lundstrom

In this colloquia review we discuss methods for thermal transport calculations for nanojunctions connected to two semi-infinite leads served as heat-baths. Our emphases are on fundamental quantum theory and atomistic models. We begin with…

介观与纳米尺度物理 · 物理学 2008-05-23 Jian-Sheng Wang , Jian Wang , J. T. Lu

We overview nonequilibrium Green function combined with density functional theory (NEGF-DFT) modeling of independent electron and phonon transport in nanojunctions with applications focused on a new class of thermoelectric devices where a…

介观与纳米尺度物理 · 物理学 2012-04-19 Branislav K. Nikolic , Kamal K. Saha , Troels Markussen , Kristian S. Thygesen

With the increasing miniaturization of electronic components and the need to optimize thermal management, it has become essential to understand heat transport at metal/semiconductor interfaces. While it has been recognized decades ago that…

The recent fabrication of graphene nanoribbon (GNR) field-effect transistors poses a challenge for first-principles modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport…

介观与纳米尺度物理 · 物理学 2010-04-28 Denis A. Areshkin , Branislav K. Nikolic
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