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相关论文: Twofold and Fourfold Symmetric Anisotropic Magneto…

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In this study, we present a theoretical interpretation of the experimental results that the anisotropic magnetoresistance (AMR) effect has a four-fold symmetric component, $c_4$, in cubic ferromagnetic metals. The theoretical model that we…

应用物理 · 物理学 2020-04-07 Yuta Yahagi , Daisuke Miura , Akimasa Sakuma

We develop a theory of the anisotropic magnetoresistance (AMR) effects of arbitrary directions of current and magnetization for ferromagnets. Here, we use the electron scattering theory with the $s$--$s$ and $s$--$d$ scattering processes,…

材料科学 · 物理学 2022-03-08 Satoshi Kokado , Masakiyo Tsunoda

We theoretically analyze the anisotropic magnetoresistance (AMR) effects of bcc Fe (+), fcc Co (+), fcc Ni (+), Fe$_4$N (-), and a half-metallic ferromagnet (-). The sign in each ( ) represents the sign of the AMR ratio observed…

材料科学 · 物理学 2015-08-24 Satoshi Kokado , Masakiyo Tsunoda , Kikuo Harigaya , Akimasa Sakuma

We derive the general expression of the anisotropic magnetoresistance (AMR) ratio of ferromagnets for a relative angle between the magnetization direction and the current direction. We here use the two-current model for a system consisting…

材料科学 · 物理学 2015-08-24 Satoshi Kokado , Masakiyo Tsunoda

Using the electron scattering theory, we obtain analytic expressions for anisotropic magnetoresistance (AMR) ratios for ferromagnets with a crystal field of tetragonal symmetry. Here, a tetragonal distortion exists in the [001] direction,…

材料科学 · 物理学 2019-03-05 Satoshi Kokado , Masakiyo Tsunoda

Experimental measurements show that the angular dependence of the anisotropic magnetoresistance (AMR) in L1$_0$ ordered FePt epitaxial films on the current orientation and magnetization direction is a superposition of the corresponding…

材料科学 · 物理学 2022-06-17 Y. Dai , Y. W. Zhao , L. Ma , M. Tang , X. P. Qiu , Y. Liu , Z. Yuan , S. M. Zhou

We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on…

介观与纳米尺度物理 · 物理学 2014-12-03 Cheng Wang , Heidi Seinige , Gang Cao , Jian-Shi Zhou , John B. Goodenough , Maxim Tsoi

The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only…

Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for…

High-order anisotropic magnetoresistance (AMR) is observed up to the 18th harmonic in cubic Fe(001) thin films, overturning the long-standing paradigm that only two- and four-fold terms are symmetry-allowed. Using angle-resolved transport…

其他凝聚态物理 · 物理学 2025-12-25 Haoran Chen , Yue Chen , Yizi Feng , Ruda Guo , Yuanfei Fan , Hongyue Xu , Tong Wu , Zhongxun Guo , Di Yue , Xiaofeng Jin , Yi Liu , Zhe Yuan , Yizheng Wu

Angular-dependent in-plane magnetoresistance (AMR) for single crystal $Na_{0.34}(H_3O)_{0.15}CoO_2$ with charge ordering is studied systematically. The anisotropic magnetoresistance shows a twofold symmetry at high temperature with rotating…

强关联电子 · 物理学 2009-11-11 C. H. Wang , X. H. Chen , G. Wu , T. Wu , H. T. Zhang , J. L. Luo , G. T. Liu , N. L. Wang

Recent experiments in ferromagnetic atomic-sized contacts have shown that the anisotropic magnetoresistance (AMR) is greatly enhanced and has an asymmetric angular dependence as compared with that of bulk samples. The origin of these…

介观与纳米尺度物理 · 物理学 2009-05-24 M. Häfner , J. K. Viljas , J. C. Cuevas

Fourfold anisotropic magnetoresistance (AMR) have been widely observed in quantum materials, but the underlying mechanisms remain poorly understood. Here we find, in a variety of three-dimensional Dirac materials that can be unifiedly…

介观与纳米尺度物理 · 物理学 2025-07-23 Daifeng Tu , Can Wang , Jianhui Zhou

We report measurements of the c-axis angular-dependent magnetoresistance (AMR) for a Na$_{0.48}$CoO$_{2}$ single crystal, with a magnetic field of 10 T rotating within Co-O planes. Below the metal-insulator transition temperature induced by…

强关联电子 · 物理学 2009-11-11 F. Hu , G. T. Liu , J. L. Luo , D. Wu , N. L. Wang , T. Xiang

Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one…

We have investigated the anisotropic magnetoresistance (AMR) of (In,Fe)As ferromagnetic semiconductor (FMS) layers grown on semi-insulating GaAs substrates. In a 10 nm-thick (In,Fe)As layer which is insulating at low temperature, we…

材料科学 · 物理学 2012-09-04 Pham Nam Hai , Daisuke Sasaki , Le Duc Anh , Masaaki Tanaka

Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that…

材料科学 · 物理学 2025-07-17 Philipp Ritzinger , Ondřej Sedláček , Jakub Železný , Karel Výborný

Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules…

介观与纳米尺度物理 · 物理学 2015-12-23 Fabian Otte , Stefan Heinze , Yuriy Mokrousov

We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In…

介观与纳米尺度物理 · 物理学 2008-04-16 D. Jacob , J. Fernandez-Rossier , J. J. Palacios

Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…

材料科学 · 物理学 2009-11-11 A. B. Shick , F. Maca , J. Masek , T. Jungwirth
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