相关论文: Influence of impurity spin dynamics on quantum tra…
A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the…
Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron…
Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…
We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier…
We study the spin relaxation of charge carriers in graphene in the presence of spin-polarized charged impurities by calculating the time evolution of initially polarized state. The spin relaxation time shows completely different energy…
Spintronics---the all-electrical control of the electron spin for quantum or classical information storage and processing---is one of the most promising applications of the two-dimensional material graphene. Although pristine graphene has…
The effects of surface chemical doping on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local…
Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers…
The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We…
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the…
The possibility of transporting spin information over long distances in graphene, owing to its small intrinsic spin-orbit coupling (SOC) and the absence of hyperfine interaction, has led to intense research into spintronic applications.…
Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum…
We propose that the observed spin-relaxation in bilayer graphene is due to resonant scattering by magnetic impurities. We analyze a resonant scattering model due to adatoms on both dimer and non-dimer sites, finding that only the former…
We have systematically introduced charged impurity scatterers in the form of Mg adsorbates to exfoliated single layer graphene and observe little variation of the spin relaxation times despite pronounced changes in the charge transport…
We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking…
Topological quantum matter exhibits novel transport phenomena driven by entanglement between internal degrees of freedom, as for instance generated by spin-orbit coupling effects. Here we report on a direct connection between the mechanism…
The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to…
The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices…
We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of about 1% with respect to the G peak. We evaluated…