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We explore the phase diagram of the Mott metal-insulator transition (MIT), focusing on the effects of particle-hole asymmetry (PHA) in the single-band Hubbard model. Our dynamical mean-field theory (DMFT) study reveals that the introduction…

The Mott transition in a multi-orbital Hubbard model involving subbands of different widths is studied within the dynamical mean field theory. Using the iterated perturbation theory for the quantum impurity problem it is shown that at low…

强关联电子 · 物理学 2009-11-10 A. Liebsch

We address the nature of the Mott transition in the Hubbard model at half-filling using cluster Dynamical Mean Field Theory (DMFT). We compare cluster DMFT results with those of single site DMFT. We show that inclusion of the short range…

强关联电子 · 物理学 2009-11-13 H. Park , K. Haule , G. Kotliar

We employ dynamical mean field theory (DMFT) with a Quantum Monte Carlo (QMC) atomic solver to investigate the finite temperature Mott transition in the Hubbard model with the nearest neighbor hopping on a triangular lattice at…

强关联电子 · 物理学 2009-11-11 K. Aryanpour , W. E. Pickett , R. T. Scalettar

We solve the impurity problem which arises within nonequilibrium dynamical mean-field theory for the Hubbard model by means of a self-consistent perturbation expansion around the atomic limit. While the lowest order, known as the…

强关联电子 · 物理学 2013-05-29 Martin Eckstein , Philipp Werner

We present clear numerical evidence for the coexistence of metallic and insulating dynamical mean field theory(DMFT) solutions in a half-filled single-band Hubbard model with bare semicircular density of states at finite temperatures.…

强关联电子 · 物理学 2009-10-31 Jaewook Joo , Viktor Oudovenko

The dynamical mean-field theory (DMFT) is employed to study the Mott transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice and…

强关联电子 · 物理学 2016-08-31 M. Potthoff , W. Nolting

While the traditional local-density approximation (LDA) cannot describe Mott insulators, {\it ab-initio} determination of the Hubbard $U$, for example, limits LDA-plus dynamical mean field theory (DMFT) approaches. Here, we attempt to…

强关联电子 · 物理学 2009-02-12 M. S. Laad , L. Hozoi , L. Craco

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

The electronic properties of paramagnetic V_2O_3 are investigated by the ab-initio computational scheme LDA+DMFT(QMC). This approach merges the local density approximation (LDA) with dynamical mean-field theory (DMFT) and uses numerically…

强关联电子 · 物理学 2009-10-31 K. Held , G. Keller , V. Eyert , D. Vollhardt , V. I. Anisimov

Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…

强关联电子 · 物理学 2019-11-06 Heike Eisenlohr , Seung-Sup B. Lee , Matthias Vojta

We use the fidelity approach to quantum critical points to study the zero temperature phase diagram of the one-dimensional Hubbard model. Using a variety of analytical and numerical techniques, we analyze the fidelity metric in various…

统计力学 · 物理学 2009-11-13 L. Campos Venuti , M. Cozzini , P. Buonsante , F. Massel , N. Bray-Ali , P. Zanardi

The Anderson impurity model is studied by means of the self-consistent hybridization expansions in its non-crossing (NCA) and one-crossing (OCA) approximations. We have found that for the one-channel spin-$1/2$ particle-hole symmetric…

强关联电子 · 物理学 2016-09-21 C. N. Sposetti , L. O. Manuel , P. Roura-Bas

We present a new quantum molecular dynamics (MD) method where the electronic structure and atomic forces are solved by a real-space dynamical mean-field theory (DMFT). Contrary to most quantum MD methods that are based on effective…

强关联电子 · 物理学 2022-08-19 Zhijie Fan , Gia-Wei Chern

The paramagnetic phase of the one-band Hubbard model is studied at zero-temperature, within the framework of dynamical mean-field theory, and for general particle-hole asymmetry where a doping-induced Mott transition occurs. Our primary…

强关联电子 · 物理学 2016-02-01 David E. Logan , Martin R. Galpin

We expose the relevance of double occupancy conservation symmetry in application of the Hubbard-I approach to strongly correlated electron systems. We propose the utility of a composite method, viz. the Hubbard-I method in conjunction with…

强关联电子 · 物理学 2013-01-10 Przemyslaw R. Grzybowski , Ravindra W. Chhajlany

In the present work, we calculate the conductance through a single quantum dot weakly coupled to metallic contacts. We use the spin-1/2 Anderson model to describe the quantum dot, while considering a finite Coulomb repulsion. We solve the…

强关联电子 · 物理学 2015-05-19 Leandro Tosi , Pablo Roura-Bas , Ana Maria Llois , Luis O. Manuel

The Mott-Hubbard metal-insulator transition is studied within a simplified version of the Dynamical Mean-Field Theory (DMFT) in which the coupling between the impurity level and the conduction band is approximated by a single pole at the…

强关联电子 · 物理学 2009-10-31 R. Bulla , M. Potthoff

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng
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