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We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…

介观与纳米尺度物理 · 物理学 2012-05-24 S. Minke , S. H. Jhang , J. Wurm , Y. Skourski , J. Wosnitza , C. Strunk , D. Weiss , K. Richter , J. Eroms

Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…

A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…

介观与纳米尺度物理 · 物理学 2022-08-22 Li Zhang , Dong Pan , Yuanjie Chen , Jianhua Zhao , H. Q. Xu

Folded single layer graphene forms a system of two decoupled monolayers being only a few Angstroms apart. Using magnetotransport measurements we investigate the electronic properties of the two layers conducting in parallel. We show a…

介观与纳米尺度物理 · 物理学 2015-05-14 H. Schmidt , T. Luedtke , P. Barthold , R. J. Haug

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples…

介观与纳米尺度物理 · 物理学 2015-05-28 Dmitri K. Efetov , Patrick Maher , Simas Glinskis , Philip Kim

Graphene quantum dots are promising candidates for qubits due to weak spin-orbit and hyperfine interactions. The hyperfine interaction, controllable via isotopic purification, could be the key to further improving the coherence. Here, we…

Quantum transport properties in molecularly thin perovskite/graphene heterostructure are experimentally investigated by Shubnikov-de Hass (SdH) oscillation and photo-resistance spectroscopy. We find an efficient charge transfer between the…

介观与纳米尺度物理 · 物理学 2023-12-22 Yan Sun , C. Morice , D. Garrot , R. Weil , K. Watanabe , T. Taniguchi , M. Monteverde , A. D. Chepelianskii

We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs…

介观与纳米尺度物理 · 物理学 2014-08-25 Mirosław Woszczyna , Miriam Friedemann , Klaus Pierz , Thomas Weimann , Franz J. Ahlers

We present a theory presenting new quantum oscillations in the magnetoresistance that are revealed as fine structures superimposed to the Schubnikov-de-Haas oscillations. They may be observed in experiments on graphene layers as fine…

介观与纳米尺度物理 · 物理学 2007-06-04 N. Garcia

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

介观与纳米尺度物理 · 物理学 2016-07-13 J. T. Ye , M. F. Craciun , M. Koshino , S. Russo , S. Inoue , H. T. Yuan , H. Shimotani , A. F. Morpurgo , Y. Iwasa

We record fine oscillations of 20 to 60 mT superimposed on larger oscillations having periodicity ~ 2 T at temperatures up to 100 K and fields up to 10 T from silicon nanowires. Having confirmed that these features appear from the edge…

介观与纳米尺度物理 · 物理学 2015-04-10 Tahir Aslan , Davie Mtsuko , Christopher Coleman , Siphephile Ncube , Somnath Bhattacharyya

Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices…

介观与纳米尺度物理 · 物理学 2022-08-22 Li Zhang , Yuanjie Chen , Dong Pan , Shaoyun Huang , Jianhua Zhao , H. Q. Xu

The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality two-dimensional gases with transport and quantum…

When electrons are confined in two-dimensional (2D) materials, quantum mechanically enhanced transport phenomena, as exemplified by the quantum Hall effects (QHE), can be observed. Graphene, an isolated single atomic layer of graphite, is…

介观与纳米尺度物理 · 物理学 2009-11-11 Yuanbo Zhang , Yan-Wen Tan , Horst L. Stormer , Philip Kim

Interactions of magnetic elements with graphene may lead to various electronic states that have potential applications. We report an in-situ experiment in which the quantum transport properties of graphene are measured with increasing…

介观与纳米尺度物理 · 物理学 2018-08-21 Chaoyi Cai , Jian-Hao Chen

Nonuniform strain in graphene acts as a valley-dependent gauge field, generating pseudomagnetic fields (PMFs) that mimic real magnetic fields but preserve global time-reversal symmetry. While local probes have visualized such fields, their…

介观与纳米尺度物理 · 物理学 2025-11-20 Divya Sahani , Sunit Das , Kenji Watanabe , Takashi Taniguchi , Amit Agarwal , Aveek Bid

This study investigates the nanoscale conductivity of encapsulated monolayer graphene at temperatures down to 5 K and magnetic fields of up to 1 T. We use the scattering-type scanning near-field optical microscopy (s-SNOM) technique to…

The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage ($V_g$) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in…

超导电性 · 物理学 2014-02-04 A. Ballestar , P. Esquinazi , J. Barzola-Quiquia , S. Dusari , F. Bern , R. R. da Silva , Y. Kopelevich

Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between…

The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the…

介观与纳米尺度物理 · 物理学 2009-03-09 H. Schmidt , T. Luedtke , P. Barthold , E. McCann , V. I. Falko , R. J. Haug
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