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Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…

Vanadium dioxide (VO2) has drawn significant attention for its near room temperature insulator to metal transition and associated structural phase transition. The underlying Physics behind the temperature induced insulator to metal and…

材料科学 · 物理学 2023-04-19 S. R. Sahu , S. S. Majid , A. Ahad , A. Tripathy , K. Dey , S. Pal , B. K. De , Wen-Pin Hsieh , R. Rawat , V. G. Sathe , D. K. Shukla

A theory of the metal-insulator transition in vanadium dioxide from the high-temperature rutile to the low- temperature monoclinic phase is proposed on the basis of cluster dynamical mean field theory, in conjunction with the density…

强关联电子 · 物理学 2009-11-10 S. Biermann , A. Poteryaev , A. I. Lichtenstein , A. Georges

The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies.…

强关联电子 · 物理学 2009-11-13 M. M. Qazilbash , A. A. Schafgans , K. S. Burch , S. J. Yun , B. G. Chae , B. J. Kim , H. T. Kim , D. N. Basov

Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In…

The metal-insulator transition and unconventional metallic transport in vanadium dioxide (VO$_2$) are investigated with a combination of spectroscopic ellipsometry and reflectance measurements. The data indicates that electronic…

强关联电子 · 物理学 2009-11-11 M. M. Qazilbash , K. S. Burch , D. Whisler , D. Shrekenhamer , B. G. Chae , H. T. Kim , D. N. Basov

Vanadium dioxide (VO$_2$) is central in the study of ultrafast photoinduced insulator-to-metal phase transitions in strongly correlated materials, and a primary candidate for next-generation light-driven devices. However, the physical…

强关联电子 · 物理学 2025-09-23 S. Mandal , P. Kumar , H. Y. Kim , Z. Pi , J. Xu , D. Chen , D. Kazenwadel , P. Baum , S. Meng , E. Goulielmakis

Vanadium dioxide (VO2) exhibits an insulator-to-metal transition accompanied by a structural transition near room temperature. This transition can be triggered by an ultrafast laser pulse. Exotic transient states, such as a metallic state…

Vanadium dioxide(VO$_2$) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to…

强关联电子 · 物理学 2017-12-20 Huihuo Zheng , Lucas K. Wagner

The insulator-to-metal transition (IMT) of the simple binary compound of vanadium dioxide VO$_2$ at $\sim 340$ K has been puzzling since its discovery more than five decades ago. A wide variety of photon and electron probes have been…

Metal-insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO2) exhibits a first-order MI transition at 340 K. For more than half a century, it has…

强关联电子 · 物理学 2020-08-26 Yasuhiro H. Matsuda , Daisuke Nakamura , Akihiko Ikeda , Shojiro Takeyama , Yuji Muraoka , Yuki Suga

We have analyzed spectral weight changes in the conduction and the valence band across insulator to metal transition (IMT) in the VO2 thin film using X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (PES). Through…

强关联电子 · 物理学 2019-07-31 S. S. Majid , K. Gautam , A. Ahad , F. Rahman , R. J. Choudhary , Frank M. F. De Groot , D. K. Shukla

Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…

Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001)…

强关联电子 · 物理学 2015-07-15 Takayoshi Katase , Kenji Endo , Hiromichi Ohta

We investigated nonlinear conduction in bulk single crystals of VO2 with precise temperature control. Two distinct nonequilibrium phenomena were identified: a gradual reduction of the charge gap and a current-induced insulator-metal…

强关联电子 · 物理学 2025-05-13 Akitoshi Nakano , Masato Imaizumi , Ichiro Terasaki

We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared…

Materials with strong electronic Coulomb interactions play an increasing role in modern materials applications. "Thermochromic" systems, which exhibit thermally induced changes in their optical response, provide a particularly interesting…

强关联电子 · 物理学 2009-05-31 Jan M. Tomczak , Silke Biermann

Vanadium dioxide (VO$_2$) undergoes a metal-insulator transition (MIT) at 340 K with the structural change between tetragonal and monoclinic crystals as the temperature is lowered. The conductivity $\sigma$ drops at MIT by four orders of…

材料科学 · 物理学 2015-06-03 Shigeji Fujita , Azita Jovaini , Salvador Godoy , Akira Suzuki

Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…

强关联电子 · 物理学 2016-09-21 Tobias Peterseim , Martin Dressel , Marc Dietrich , Angelika Polity

We investigated optical absorption coefficient spectra of an epitaxial VO2 film in wide photon energy (0.5 - 5.0 eV) and temperature (100 - 380 K) regions. In its insulating phase, we observed two d-d transition peaks around 1.3 eV and 2.7…

强关联电子 · 物理学 2007-05-23 C. H. Koo , J. S. Lee , M. W. Kim , Y. J. Chang , T. W. Noh , J. H. Jung B. G. Chae , H. -T. Kim
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