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相关论文: Current-induced magnetization reversal in pseudo s…

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We present electrical measurements of high-frequency magnetic dynamics excited by spin-polarized currents in Co/Cu/Ni80Fe20 nanopillar devices, with a magnetic field applied perpendicular to the sample layers. As a function of current and…

Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for…

介观与纳米尺度物理 · 物理学 2007-05-23 Yunong Qi , Michael E. Flatté

We demonstrate that magnetic multilayer nanopillars can be efficiently protected from oxidation by coating with silicon. Both the protected and the oxidized nanopillars exhibit an increase of reversal current at cryogenic temperatures.…

材料科学 · 物理学 2009-11-13 Sergei Urazhdin , Phillip Tabor

We propose a hole-induced mechanism of spin-polarized current generation by circularly polarized synchrotron radiation and corresponding induced magnetization in magnetically-doped topological insulators…

We consider the spin torque induced by a current flowing ballistically through a magnetic domain wall. In addition to a global pressure in the direction of the electronic flow, the torque has an internal structure of comparable magnitude…

介观与纳米尺度物理 · 物理学 2009-11-10 Xavier Waintal , Michel Viret

In systems with time-reversal symmetry, the orbital magnetization is zero in equilibrium. Recently, it has been proposed that the orbital magnetization can be induced by an electric current in a helical crystal structure in the same manner…

材料科学 · 物理学 2020-11-23 D. Hara , M. S. Bahramy , S. Murakami

Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external…

介观与纳米尺度物理 · 物理学 2020-03-03 Yu Sheng , Yi Cao , Kevin William Edmonds , Yang Ji , Houzhi Zheng , Kaiyou Wang

We study the magnetic damping in the simplest of synthetic antiferromagnets, i.e. antiferromagnetically exchange-coupled spin valves in which applied magnetic fields tune the magnetic configuration to become noncollinear. We formulate the…

介观与纳米尺度物理 · 物理学 2015-08-07 Takahiro Chiba , Gerrit E. W. Bauer , Saburo Takahashi

Strongly-interacting nanomagnetic arrays are crucial across an ever-growing suite of technologies. Spanning neuromorphic computing, control over superconducting vortices and reconfigurable magnonics, the utility and appeal of these arrays…

介观与纳米尺度物理 · 物理学 2020-12-18 J. C. Gartside , S. G. Jung , S. Y. Yoo , D. M. Arroo , A. Vanstone , T. Dion , K. D. Stenning , W. R. Branford

We investigate the current induced magnetization dynamics and magnetization switching in an unconventional p-wave superconductor sandwiched between two misaligned ferromagnetic layers by numerically solving Landau-Lifshitz-Gilbert equation…

超导电性 · 物理学 2019-10-15 Saumen Acharjee , Umananda Dev Goswami

This paper shows that the presence of two dynamical regimes, characterized by different precessional-axis, is the origin of the non-monotonic behavior of the output integrated power for large-amplitude magnetization precession driven by…

其他凝聚态物理 · 物理学 2009-11-13 G. Siracusano , G. Finocchio , A. La Corte , G. Consolo , L. Torres , B. Azzerboni

Because of the peculiar coupling of spatial and spin degrees of freedom effected by the Rashba spin-orbit interaction, lateral confinement of a two dimensional electronic system leads to a finite transverse spin polarization near the…

介观与纳米尺度物理 · 物理学 2007-05-23 S. Chesi , G. F. Giuliani

The magnetization reversal of three-segment cylindrical nanoelements comprising of alternating nanowire and nanotube sections is investigated by means of Monte Carlo simulations. Such nanoelements may feature a three-state behaviour with an…

介观与纳米尺度物理 · 物理学 2015-05-05 R. F. Neumann , M. Bahiana , S. Allende , D. Altbir , D. Görlitz , K. Nielsch

Recent studies in three dimensional spintronics propose that the \OE rsted field plays a significant role in cylindrical nanowires. However, there is no direct report of its impact on magnetic textures. Here, we use time-resolved scanning…

介观与纳米尺度物理 · 物理学 2021-05-19 M. Schöbitz , S. Finizio , A. De Riz , J. Hurst , C. Thirion , D. Gusakova , J. -C. Toussaint , J. Bachmann , J. Raabe , O. Fruchart

An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two…

We theoretically predict a nonequilibrium phase transition in quantum spin systems induced by a laser, which provides a purely quantum-mechanical way of coherently controlling magnetization. Namely, when a circularly polarized laser is…

强关联电子 · 物理学 2014-09-11 Shintaro Takayoshi , Hideo Aoki , Takashi Oka

We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…

介观与纳米尺度物理 · 物理学 2015-06-05 Tom Dunn , Alex Kamenev

We discuss a possible mechanism of the spin-transfer induced oscillations of a vortex in the free layer of spin-valve nanostructures, in which the polarizer layer has a planar magnetization. We demonstrate that if such planar polarizer is…

材料科学 · 物理学 2015-05-18 A. V. Khvalkovskiy , J. Grollier , N. Locatelli , Ya. V. Gorbunov , K. A. Zvezdin , V. Cros

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…

介观与纳米尺度物理 · 物理学 2016-10-27 Robert Göckeritz , Nico Homonnay , Alexander Müller , Bodo Fuhrmann , Georg Schmidt

The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…