相关论文: Electrical Oscillation in Pt/VO2 Bilayer Strips
Spin-transfer torque in asymmetric spin valves can destabilize both parallel and antiparallel configurations and can lead to precessional modes also in the absence of an external magnetic field. We find a bistable precessional regime in…
We have analyzed low-temperature behavior of two-dimensional electron gas in polar heterostructures subjected to a high electric field. When the optical phonon emission is the fastest relaxation process, we have found existence of…
Monolayer $MoS_2$ is a typical valleytronic material with valley-spin locked valence bands. We numerically investigate the valley-spin polarized current in monolayer $\rm MoS_2$ via adiabatic electron pumping. By introducing an exchange…
We have investigated the spatial distribution of the electron temperature generated in a two-dimensional electron system (2DES) subjected to a perpendicular magnetic field. We measure thermoelectric voltages between Ohmic contacts located…
It is well known that oscillations at the electron plasma frequency may appear due to instability of the plasma sheath near a positively biased electrode immersed in plasma. This instability is caused by transit-time effects when electrons,…
The paper presents the results of a study of electron-beam modification (EBM) of VO2-switch I-V curve threshold parameters and the self-oscillation frequency of a circuit containing such a switching device. EBM in vacuum is reversible and…
A nanoelectronic device made of twisted bilayer graphene (TBLG) is proposed to steer the direction of the current flow. The ballistic electron current, injected at one edge of the bottom layer, can be guided predominantly to one of the…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
Among smart materials, piezoelectric materials occupy a very prominent position for sensing and actuation functions. Combined with simple or more advanced shunts, they are also proposed in various vibration mitigation schemes. However, the…
This paper compares the performances of a vibrationpowered electrical generators using PZT piezoelectric ceramic associated to two different power conditioning circuits. A new approach of the piezoelectric power conversion based on a…
We implement a capacitorless model of a VO2 oscillator by introducing into the circuit of a field-effect transistor and a VO2 thermal sensor, which provide negative current feedback with a time delay. We compare the dynamics of current and…
We investigate the semiclassical electronic transport properties of the bilayer silicene-like system in the presence of charged impurity. The trigonal warping due to the interlayer hopping, and its effect to the band structure of bilayer…
This paper presents mathematical modeling and numerical analysis of bifurcation and synchronization phenomena in a system of coupled oscillators driven by a finite-power energy source and generating two-dimensional stick-slip…
The output of oscillators is usually not stable over time. In particular, phase variations---or \emph{phase noise}---corrupts the oscillations. In this letter, we describe a circuit that designed to average the phase noise processes and…
MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is in the near infrared region and both monolayers and…
We envision the use of an indium tin oxide (ITO) thin film as part of a bi-layered silicon-photonics subwavelength device to boost nonlinearity-assisted all-passive nonreciprocal behavior. The asymmetric p-polarized oblique excitation of a…
In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a…
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron…
Twisting bilayers of transition metal dichalcogenides (TMDs) gives rise to a periodic moir\'{e} potential resulting in flat electronic bands with localized wavefunctions and enhanced correlation effects. In this work, scanning tunneling…
The application of strain to 2D materials allows manipulating the electronic, magnetic, and thermoelectric properties. These physical properties are sensitive to slight variations induced by tensile and compressive strain and to the…