相关论文: Electron-phonon processes of the silicon-vacancy c…

The nitrogen-vacancy (NV) center in diamond is well known in quantum metrology and quantum information for its favorable spin and optical properties, which span a wide temperature range from near zero to over 600 K. Despite its prominence,…

Applications of negatively charged nitrogen-vacancy center in diamond exploit the center's unique optical and spin properties, which at ambient temperature, are predominately governed by electron-phonon interactions. Here, we investigate…

Silicon-vacancy (SiV) center in diamond is a photoluminescence (PL) center with a characteristic zero-phonon line energy at 1.681 eV that acts as a solid-state single photon source and, potentially, as a quantum bit. The majority of the…

We study a setup where a single negatively-charged silicon-vacancy center in diamond is magnetically coupled to a low-frequency mechanical bending mode and via strain to the high-frequency phonon continuum of a semi-clamped diamond beam. We…

We use single-spin resonant spectroscopy to study the spin structure in the orbital excited-state of a diamond nitrogen-vacancy center at room temperature. We find that the excited state spin levels have a zero-field splitting that is…

We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence…

The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly…

The emission intensity of diamond samples containing nitrogen-vacancy centres are measured as a function of magnetic field along a <111> direction for various temperatures. At low temperatures the responses are sample and stress dependent…

We report on measurements of the photoluminescence (PL) properties of single nitrogen-vacancy (NV) centers in diamond at temperatures between 4-300 K. We observe a strong reduction of the PL intensity and spin contrast between ca. 10-100 K…

Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by…

Tin-vacancy (SnV) color centers were created in diamond by ion implantation and subsequent high temperature annealing up to 2100 {\deg}C at 7.7 GPa. The first-principles calculation suggests that the large atom of tin can be incorporated…

Group IV color centers in diamond are among the most promising optically active spin systems with strong optical transitions and long spin coherences. The ground-state splitting of the center is particularly important to suppress the…

We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a…

The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and…

We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced…

Here we investigate the temperature-dependent non-Markovian dynamics of the SiV^- center in diamond, focusing on the roles of low- and high-frequency quasi-localized phonon modes. Low-frequency phonons exhibit stronger electron-phonon…

The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing…

Vacancy centers in diamond have proven to be a viable solid-state platform for quantum coherent opto-electronic applications. Among the variety of vacancy centers, silicon-vacancy (SiV) centers have recently attracted much attention as an…

We report the optical observation of lead-vacancy (PbV) centers in diamond fabricated by Pb ion implantation and subsequent high-temperature annealing (2100 {\deg}C) under high pressure (7.7 GPa). Their optical properties were characterized…

Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics…