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We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni…

介观与纳米尺度物理 · 物理学 2015-06-16 T. Moriyama , K. Nagashio , T. Nishimura , A. Toriumi

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate…

介观与纳米尺度物理 · 物理学 2011-10-04 Han Wang , Thiti Taychatanapat , Allen Hsu , Kenji Watanabe , Takashi Taniguchi , Pablo Jarillo-Herrero , Tomas Palacios

Carbon-based nanostructures and graphene, in particular, evoke a lot of interest as new promising materials for nanoelectronics and spintronics. One of the most important issue in this context is the impact of external electrodes on…

介观与纳米尺度物理 · 物理学 2012-03-16 S. Krompiewski

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

We propose a model for nanoscale supercapacitor consisting of two-dimensional insulating BN layers placed between two commensurate and metallic graphene layers. First-principles Density Functional calculations of structure optimized total…

介观与纳米尺度物理 · 物理学 2013-03-05 V. Ongun Özçelik , C. Ataca , S. Ciraci

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

介观与纳米尺度物理 · 物理学 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne

Substituting heteroatoms and non-benzenoid carbons into nanographene structure offers an unique opportunity for atomic engineering of electronic properties. Here we show the bottom-up synthesis of graphene nanoribbons (GNRs) with embedded…

Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single…

介观与纳米尺度物理 · 物理学 2020-01-03 Nicolas Leconte , Jeil Jung

Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and…

Graphene nanoribbons are the counterpart of carbon nanotubes in graphene-based nanoelectronics. We investigate the electronic properties of chemically modified ribbons by means of density functional theory. We observe that chemical…

材料科学 · 物理学 2009-09-29 F. Cervantes-Sodi , G. Csányi , S. Piscanec , A. C. Ferrari

Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of…

介观与纳米尺度物理 · 物理学 2015-03-19 Adrien Allain , Zheng Han , Vincent Bouchiat

Owing to its peculiar energy dispersion, the quantum capacitance property of graphene can be exploited in a two-dimensional layered capacitor configuration. Using graphene and boron nitride respectively as the electrodes and the insulating…

量子物理 · 物理学 2017-05-19 Sina Khorasani , Akshay Koottandavida

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…

介观与纳米尺度物理 · 物理学 2016-01-20 Nick R. Papior , Tue Gunst , Daniele Stradi , Mads Brandbyge

Graphene nanoribbons have attracted attention for their novel electronic and spin transport properties1-6, and because nanoribbons less than 10 nm wide have a band gap that can be used to make field effect transistors. However, producing…

材料科学 · 物理学 2015-05-18 Liying Jiao , Xinran Wang , Georgi Diankov , Hailiang Wang , Hongjie Dai

Recently, two-dimensional nanostructures consisting of alternating graphene and boron nitride (BN) domains have been synthesized. These systems possess interesting electronic and mechanical properties, with potential applications in…

介观与纳米尺度物理 · 物理学 2015-06-16 Yan Li , Riccardo Mazzarello

In this paper, we apply the first-principle theory to explore how the electronic structures of armchair graphene nanoribbons (AGNRs) are affected by chemical modifications. The edge addends include H, F, N, NH$_{2}$, and NO$_{2}$. Our…

材料科学 · 物理学 2007-11-13 Hao Ren , Qunxiang Li , Haibin Su , Q. W. Shi , Jie Chen , Jinlong Yang

Graphene is a 2D material with appealing electronic and optoelectronic properties. It is a zero-bandgap material with valence and conduction bands meeting in a single point (Dirac point) in the momentum space. Its conductivity can be…

应用物理 · 物理学 2020-03-10 V. Sorianello , G. Contestabile , M. Romagnoli

We study by density functional and large scale tight-binding transport calculations the electronic structure, magnetism and transport properties of the recently proposed graphene ribbons with edges rolled to form nanotubes. Edges with…

介观与纳米尺度物理 · 物理学 2015-06-11 M. A. Akhukov , Shengjun Yuan , A. Fasolino , M. I. Katsnelson

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

介观与纳米尺度物理 · 物理学 2015-06-05 J. Velasco , Y. Lee , L. Jing , G. Liu , W. Bao , C. N. Lau

Graphene has been widely studied for various applications due to its outstanding electrical and mechanical properties. However, its potential in thermoelectric applications has been limited by a low Seebeck coefficient and high thermal…

材料科学 · 物理学 2024-04-04 Laura Caputo , Viet-Hung Nguyen , Jean-Christophe Charlier