相关论文: Low frequency noise peak near magnon emission ener…

Giant Random Telegraph Noise (RTN) in the resistance fluctuation of a macroscopic film of perovskite-type manganese oxide La2/3Ca1/3MnO3 has been observed at various temperatures ranging from 4K to 170K, well below the Curie temperature (TC…

Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…

We study the effect of an AC bias on the low frequency noise, notably $1/f^\gamma$ with $\gamma<2$, of metal-insulator-metal tunnel junctions at room temperature. The measurement is performed in the 6Hz-100kHz frequency range with an AC…

We compute the shot noise in ballistic and disordered Fe/MgO/Fe tunnel junctions by a wave function-matching method. For tunnel barriers with no more than 5 atomic layers we find a suppression of the Fano factor as a function of the…

Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise…

In the absence of any external applied magnetic field, we have found that a magnetic tunnel junction (MTJ) can produce a significant output direct voltage under microwave radiation at frequencies, which are far from the ferromagnetic…

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model,…

In this paper we analyze different contributions to the magnetoresistance of magnetic tunneling junctions at low voltages. A substantial fraction of the resistance drop with voltage can be ascribed to variations of the density of states and…

Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…

Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…

We investigate bias voltage effects on the spin-dependent transport properties of Fe/MgAl${}_2$O${}_4$/Fe(001) magnetic tunneling junctions (MTJs) by comparing them with those of Fe/MgO/Fe(001) MTJs. By means of the nonequilibrium Green's…

We study a superconducting transmission line (TL) formed by distributed LC oscillators and excited by external magnetic fluxes which are aroused from random magnetization (A) placed in substrate or (B) distributed at interfaces of a…

We report on the noise performance characteristics of magnetic sensors using both magnetic tunnel junction (MTJ) and giant magnetoresistance (GMR) elements. Each sensor studied has a notably different noise and detectivity. Of the sensors…

Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C…

We observed a dramatic peak in the 1/f noise at the metal-insulator transition (MIT) in low-Tc manganites. This many-orders-of-magnitude noise enhancement is observed for both polycrystalline and single-crystal samples of…

We perform an experimental study of DC current induced microwave emission in a magnetic tunnel junction (MTJ) consisting of three active magnetic layers. For this tri-layer structure, in addition to a conventional bilayer orthogonal MTJ…

It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential…

Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of…

The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…

GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…