相关论文: Spin-orbit torques in L1$_0$-FePt/Pt thin films dr…
A density-functional-theory based relativistic scattering formalism is used to study charge transport through thin Pt films with room temperature lattice disorder. A Fuchs-Sondheimer specularity coefficient $p \sim 0.5$ is needed to…
In collinear magnets lacking inversion symmetry application of electric currents induces torques on the magnetization and conversely magnetization dynamics induces electric currents. The two effects, which both rely on spin-orbit…
In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of…
Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic…
A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the…
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…
Spin textures that are not readily available in the domain structures of continuous magnetic thin films can be stabilized when patterned to micro/nano scales due to the dominant effect of dipolar magnetic interactions. Fabrication of such…
Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to…
Strong magnetic field pulses associated with a relativistic electron bunch can imprint switching patterns in magnetic thin films that have uniaxial in-plane anisotropy. In experiments with Fe and FeCo alloy films the pattern shape reveals…
Spin transfer torques allow the electrical manipulation of the magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to…
This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…
Topological insulator (TI) surface states exert strong spin-orbit torques. When the magnetization is in the plane its interaction with the TI conduction electrons is non-trivial, and is influenced by extrinsic spin-orbit scattering. This is…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…
Electrical current pulses can be used to manipulate magnetization efficiently via spin-orbit torques (SOTs). Pulse durations as short as a few picoseconds have been used to switch the magnetization of ferromagnetic films, reaching the THz…
We theoretically investigate the temperature dependence of nuclear spin-lattice relaxation rate $T_1^{-1}$ in bulk odd-frequency superconductivity. For a model odd-frequency pairing interaction, we first evaluate the superconducting order…
Motivated by recent realizations of Dy$_{2}$Ti$_{2}$O$_{7}$ and Ho$_{2}$Ti$_{2}$O$_{7}$ spin ice thin films, and more generally by the physics of confined gauge fields, we study a model of spin ice thin film with surfaces perpendicular to…
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and…
We apply the finite-temperature variational cluster approach to a strongly correlated and spin-orbit coupled model for four electrons (i.e. two holes) in the $t_{2g}$ subshell. We focus on parameters suitable for antiferromagnetic Mott…
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin…
Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external…