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Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in…

Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either…

介观与纳米尺度物理 · 物理学 2013-01-30 Marcus Freitag , Tony Low , Fengnian Xia , Phaedon Avouris

Light induced current in two-dimensional (2D) layered materials emerges from mechanisms such as photothermoelectric effect, photovoltaic effect or nonlocal hot carrier transport. Semiconducting layered transition metal dichalcogenides have…

材料科学 · 物理学 2018-05-16 Naveed Mehmood , Hamid Reza Rasouli , Onur Çakıroğlu , T. Serkan Kasırga

We study the photoresponse of graphene field effect transistors using scanning photocurrent microscopy in near and far field configurations, and we find that the response of graphene under a source-drain bias voltage away from the contacts…

介观与纳米尺度物理 · 物理学 2015-02-11 Sameer Grover , Sudipta Dubey , John P. Mathew , Mandar M. Deshmukh

The ferroelectric polarization and short-circuit photocurrent in BaTiO3 thin films have been studied for different contact configurations that allow to measure the photoresponse and polarization under the presence of large or negligible…

We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition…

介观与纳米尺度物理 · 物理学 2015-05-13 S. Thunich , L. Prechtel , D. Spirkoska , G. Abstreiter , A. Fontcuberta i Morral , A. W. Holleitner

In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed,…

介观与纳米尺度物理 · 物理学 2022-04-05 W. L. Zhen , W. T. Miao , W. L. Zhu , C. J. Zhang , W. K. Zhu

Circular photogalvanic currents are a promising new approach for spin-optoelectronics. To date, such currents have only been induced in topological insulator flakes or extended films. It is not clear whether they can be generated in…

介观与纳米尺度物理 · 物理学 2020-05-08 N. Meyer , K. Geishendorf , J. Walowski , A. Thomas , M. Münzenberg

Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the far-infrared. Despite…

介观与纳米尺度物理 · 物理学 2018-05-01 Leonardo Viti , Miriam S. Vitiello

We report on the generation of bulk photocurrents in materials driven by non-resonant bi-chromatic fields that are circularly polarized and co-rotating. The nonlinear photocurrents have a fully controllable directionality and amplitude…

The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to…

介观与纳米尺度物理 · 物理学 2013-07-19 Chung-Chiang Wu , Deep Jariwala , Vinod K. Sangwan , Tobin J. Marks , Mark C. Hersam , Lincoln J. Lauhon

The dependence of the photocurrent generated in a Pd/graphene/Ti junction device on the incident photon polarization is studied. Spatially resolved photocurrent images were obtained as the incident photon polarization is varied. The…

介观与纳米尺度物理 · 物理学 2015-09-30 Minjung Kim , Ho Ang Yoon , Seungwoo Woo , Duhee Yoon , Sang Wook Lee , Hyeonsik Cheong

DC photoelectrical currents can be generated purely as a non-linear effect in uniform media lacking inversion symmetry without the need for a material junction or bias voltages to drive it, in what is termed photogalvanic effect. These…

介观与纳米尺度物理 · 物理学 2016-08-17 F. Hipolito , Thomas G. Pedersen , Vitor M. Pereira

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different…

Metal-graphene-metal photodetectors utilize photocurrent generated near the graphene/metal junctions and have many advantages including high speed and broad-band operation. Here, we report on photocurrent generation at ABA/ABC stacking…

介观与纳米尺度物理 · 物理学 2015-10-07 Minjung Kim , Seon-Myeong Choi , Ho Ang Yoon , Sun Keun Choi , Jae-Ung Lee , Jungcheol Kim , Sang Wook Lee , Young-Woo Son , Hyeonsik Cheong

We investigate the optoelectronic response of a graphene interface junction, formed with bilayer and single-layer graphene, by photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by…

介观与纳米尺度物理 · 物理学 2015-05-13 Xiaodong Xu , Nathaniel M. Gabor , Jonathan S. Alden , Arend van der Zande , Paul L. McEuen

Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is…

介观与纳米尺度物理 · 物理学 2022-09-07 H. Hedayat , A. Ceraso , G. Soavi , S. Akhavan , A. Cadore , C. Dallera , G. Cerullo , A. C. Ferrari , E. Carpene

We present prominent photoresponse of bio-inspired graphene-based phototransistors sensitized with chlorophyll molecules. The hybrid graphene-chlorophyll phototransistors exhibit a high gain of 10^6 electrons per photon and a high…

Photoinduced topological phase transitions (TPTs) in black phosphorous (BP) under compressive strain were investigated by combining Floquet theory and first-principles calculations. Intriguing photo-dressed electronic states including…

材料科学 · 物理学 2018-06-12 Hang Liu , Jia-Tao Sun , Cai Cheng , Feng Liu , Sheng Meng

Transverse thermophotovoltaics has been conceptually proposed as a paradigm distinct from conventional junction-based photovoltaics, but has so far lacked a theoretical foundation. In this Letter, we establish a microscopic formalism of…

介观与纳米尺度物理 · 物理学 2026-05-28 Dingwei He , Gaomin Tang
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