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This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction…

介观与纳米尺度物理 · 物理学 2016-11-17 P R Yasasvi Gangavarapu , Punith Chikkahalli Lokesh , K N Bhat , A K Naik

The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected…

材料科学 · 物理学 2010-02-08 Wolfgang L. Kalb , Bertram Batlogg

It has been shown that the first C layer on the SiC(0001)(2{\times}2)C surface already exhibits graphene-like electronic structure, with linear pi bands near the Dirac point. Indeed, the (2{\times}2)C reconstruction, with a Si adatom and C…

介观与纳米尺度物理 · 物理学 2015-05-27 F. Hiebel , P. Mallet , J. -Y. Veuillen , L. Magaud

Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotropic absorption add an appealing functionality to graphene,…

介观与纳米尺度物理 · 物理学 2013-12-31 Guang-Xin Ni , Hong-Zhi Yang , Wei Ji , Seung-Jae Baeck , Chee-Tat Toh , Jong-Hyun Ahn , Vitor M. Pereira , Barbaros Özyilmaz

We have investigated transport through graphene Andreev interferometers exhibiting reentrance of the superconducting proximity effect. We observed a crossover in the Andreev conductance oscillations as a function of gate voltage ($V_{BG}$).…

介观与纳米尺度物理 · 物理学 2013-04-25 Fabio Deon , Sandra Šopić , Alberto F. Morpurgo

Understanding the adhesion between graphene and other materials is crucial for achieving more reliable graphene-based applications in electronic devices and nanocomposites. The ultra-thin profile of graphene, however, poses significant…

材料科学 · 物理学 2011-11-10 Zhao Zhang , Teng Li

A theoretical model is proposed to describe asymmetric gate-voltage dependence of conductance and noise in two-terminal ballistic graphene devices. The model is analyzed independently within the self-consistent Hartree and Thomas-Fermi…

介观与纳米尺度物理 · 物理学 2011-07-08 W. -R. Hannes , M. Jonson , M. Titov

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…

材料科学 · 物理学 2009-09-30 Pei Zhao , Jyotsna Chauhan , Jing Guo

Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the…

介观与纳米尺度物理 · 物理学 2015-05-27 S. C. Martin , S. Samaddar , B. Sacépé , A. Kimouche , J. Coraux , F. Fuchs , B. Grévin , H. Courtois , C. B. Winkelmann

The theory of optical effects in hydrogenated graphene (graphane) in terahertz and infrared range is developed, including the analysis of complex conductivity, reflection coefficient for graphane on a substrate and dispersion of surface…

介观与纳米尺度物理 · 物理学 2022-10-19 E. I. Preobrazhensky , I. V. Oladyshkin , M. D. Tokman

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the…

介观与纳米尺度物理 · 物理学 2012-09-25 Alina Veligura , Paul J. Zomer , Ivan J. Vera-Marun , Csaba Józsa , Pavlo I. Gordiichuk , Bart J. van Wees

In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz…

The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/$n$-Ge(110) interface are…

We investigate the electronic properties of a hybrid system that comprises single-bilayer graphene structures subjected to a perpendicular magnetic field. Specifically, our focus is on the behavior exhibited by the zigzag boundaries of the…

介观与纳米尺度物理 · 物理学 2023-12-27 Nadia Benlakhouy , Ahmed Jellal , Michael Schreiber

We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…

材料科学 · 物理学 2015-05-19 S. Rumyantsev , G. Liu , W. Stillman , M. Shur , A. A. Balandin

The process of coherent creation of particle - hole excitations by an electric field in graphene is quantitatively described. We calculate the evolution of current density, number of pairs and energy after switching on the electric field.…

介观与纳米尺度物理 · 物理学 2009-11-13 M. Lewkowicz , B. Rosenstein

The effects of Coulomb interactions on the electronic properties of bilayer graphene nanoribbons (BGNs) covered by a gate electrode are studied theoretically. The electron density distribution and the potential profile are calculated…

介观与纳米尺度物理 · 物理学 2015-05-19 Hengyi Xu , T. Heinzel , A. A. Shylau , I. V. Zozoulenko

We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance…

介观与纳米尺度物理 · 物理学 2020-07-30 Hadi Z. Olyaei , Bruno Amorim , Pedro Ribeiro , Eduardo V. Castro

The electronic and optical properties of graphene nanoribbons under uniaxial periodic strain have been explored using various nearest-neighbor hopping patterns. It is found that by properly selecting hopping patterns, momentum-resolved gaps…

介观与纳米尺度物理 · 物理学 2024-11-05 Chunwen Zhang , W. X. Yan

Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…

介观与纳米尺度物理 · 物理学 2013-02-06 Guang-Xin Ni , Yi Zheng , Sukang Bae , Chin Yaw Tan , Orhan Kahya , Jing Wu , Byung Hee Hong , Kui Yao , Barbaros Özyilmaz