相关论文: Silicon Oxide Passivation of Single-Crystalline CV…

Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge (2000 cm^2/Vs), two adjacent neighbours in the group IV…

Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of SiV0 centers requires careful…

Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) can exhibit a narrow photoluminescence (PL) line and…

We introduce a process for the fabrication of high quality, spatially isolated nano-diamonds on iridium via microwave plasma assisted CVD-growth. We perform spectroscopy of single silicon-vacancy (SiV)-centres produced during the growth of…

The cooling of solids by optical means only using anti-Stokes emission has a long history of research and achievements. Such cooling methods have many advantages ranging from no-moving parts or fluids through to operation in vacuum and may…

We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer…

The integration of diamond with $\beta$-Ga$_2$O$_3$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conductivity of $\beta$-Ga$_2$O$_3$ can lead to localized…

4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is…

In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor…

The Nitrogen Vacancy color center (NV-) in diamond is of great interest for novel photonic applications. Diamond nano-photonic structures are often implemented using Focused-Ion-Beam (FIB) processing, leaving a damaged surface which has a…

The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing…

Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications, because of the relative ease of…

Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate…

The integration of high-thermal-conductivity diamond films onto silicon carbide (SiC) substrates offers a promising pathway for thermal management in high-power electronic devices. Here, we investigate the depth-dependent thermal…

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid…

Using the real-time diagrammatic technique and taking into account both the sequential and cotunneling processes, we analyze the transport properties of single-wall metallic carbon nanotubes coupled to nonmagnetic and ferromagnetic leads in…

The p-type surface conductivity of hydrogen-terminated diamond (HD) has opened up new possibilities for the development of diamond-based electronic devices. However, the origin of the persistent photoconductivity (PPC) observed in…

Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (113)-oriented diamond substrate. We show that preferential…

The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a…

Single defects in diamond and especially negatively charged nitrogen vacancy (NV) centers are very promising quantum systems with wide applications in physics and biology. It was shown that their coherence properties can be strongly…