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Antiferroelectrics attract broad attention due to their unusual physical characteristics, chief among which is the double-hysteresis loop that separates their antipolar ground state from the voltage-induced polar phase, which is promising…

材料科学 · 物理学 2025-03-27 G. Catalan , A. Gruverman , J. Íñiguez-González , D. Meier , M. Trassin

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

材料科学 · 物理学 2025-12-24 Hao-Wen Xu , Wen-Cheng Fan , Jun-Ding Zheng , Cheng-Shi Yao , Ni Zhong , Wen-Yi Tong , Chun-Gang Duan

We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm…

The ground-state structure of monolayers and nanoplatelets of SnS with a thickness from two to five monolayers is calculated from first principles. It is shown that nanoobjects with only odd number of monolayers are ferroelectric. The…

材料科学 · 物理学 2018-10-30 Alexander I. Lebedev

Multiferroics are materials with coexisting electric and magnetic orders that are of central importance for fundamental research and technological applications. Unfortunately, intrinsic multiferroics that operate at room temperature remain…

材料科学 · 物理学 2025-11-06 Ping Tang , Gerrit E. W. Bauer

Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an…

Vector optical vortices exhibit complex polarisation patterns due to the interplay between spin and orbital angular momenta. Here we demonstrate, both analytically and with simulations, that certain polarisation features of optical vortex…

This paper provides a brief introduction to the phenomenological aspects of the polarization in ferrroelectric materials, and then an analysis of a few selected topics related to the modelling of ferroelectrics. The description of…

新兴技术 · 计算机科学 2023-11-08 David Esseni , Francesco Driussi , Daniel Lizzit , Marco Massarotto , Mattia Segatto

Recent theoretical and experimental advances in quantum ferroelectrics suggest that ferroelectricity can also emerge in non-polar space group, highlighting the limitations of conventional polar space group criteria in identifying…

材料科学 · 物理学 2026-05-15 Wei Luo , Shihan Deng , Hongjun Xiang , Laurent Bellaiche

Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development…

介观与纳米尺度物理 · 物理学 2024-04-05 Le Zhang , Jing Ding , Hanxiao Xiang , Naitian Liu , Wenqiang Zhou , Linfeng Wu , Na Xin , Kenji Watanabe , Takashi Taniguchi , Shuigang Xu

We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach shown…

材料科学 · 物理学 2009-11-10 Anna N. Morozovska , Eugeny A. Eliseev

The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few…

材料科学 · 物理学 2023-01-11 Changming Ke , Yihao Hu , Shi Liu

We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…

We describe ferroelectric thin films with circular electrodes and develop a thermodynamic theory that explains previously mysterious experiments. It is found to be especially useful for restricted geometries such as microstructures for…

材料科学 · 物理学 2015-06-19 Laurent Baudry , Anaïs Sené , Igor A. Luk'yanchuk , Laurent Lahoche , James F Scott

We predict the existence of a novel class of multidimensional light localizations in out-of-equilibrium ferroelectric crystals. In two dimensions, the non-diffracting beams form at arbitrary low power level and propagate even when their…

光学 · 物理学 2013-05-29 Claudio Conti , Aharon J. Agranat , Eugenio DelRe

Using first-principles density functional theory, we study piezoelectricity in short-period superlattices made with combination of ferroelectric and paraelectric components and exhibiting polar discontinuities. We show that piezoelectric…

计算物理 · 物理学 2015-05-19 Hena Das , Umesh V. Waghmare , T. Saha-Dasgupta

Ferroelectric materials exhibit a switchable, spontaneous polarization at the unit cell level--an attractive property utilized in many emerging technologies including, among others, high-density memory storage, low-power transistors, and…

材料科学 · 物理学 2026-01-15 Claire Griesbach , Tizian Scharsach , Morgan Trassin , Dennis M. Kochmann

A wide variety of applications has inspired great interest in designing new materials and investigating fundamental physics in the ferroelectric field. In the concept of ferroelectricity, the spontaneous polarization is traditionally…

材料科学 · 物理学 2025-03-18 Zengqian Wang , Yuanfang Yue , Z. Y. Xie , Fengjie Ma , Xun-Wang Yan

Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in…

材料科学 · 物理学 2015-06-04 Satyaprasad P. Senanayak , S. Guha , K. S. Narayan

Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…

材料科学 · 物理学 2025-10-29 J. Schultheiß , G. Picht , J. Wang , Y. A. Genenko , L. Q. Chen , J. E. Daniels , J. Koruza