相关论文: Engineered spin-valve type magnetoresistance in Fe…

We report the precise control of tunneling magnetoresistance (TMR) in devices of self-assembled core/shell Fe$_3$O$_4$/Co$_{1-x}$Zn$_x$Fe$_2$O$_4$ nanoparticles ($0\leq x\leq 1$). Adjusting the magnetic anisotropy through the content of…

The unusual magnetoresistance (MR) behavior in Sr2FeMoO6, recently termed as spin-valve type MR (SVMR), presents several anomalies that are little understood so far. The difficulty in probing the origin of this phenomenon, arising from the…

Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…

In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic…

The interaction between the itinerant spins in metals and localized spins in magnetic insulators thus far has only been explored in collinear spin systems, such as garnets. Here, we report the spin-Hall magnetoresistance (SMR) sensitive to…

Investigation of the magnetic switching and magnetoresistive behaviour of nanoscale spin valve elements (SVs) of varying physical parameters such as shape, element size, dimensional aspect ratio, and array size is of vital importance for…

A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexible in terms of material choice for the active layers.…

We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR).…

Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…

We study the spin Hall magnetoresistance (SMR) in Pt grown $\textit{in situ}$ on CoFe$_2$O$_4$ (CFO) ferrimagnetic insulating (FMI) films. A careful analysis of the angle-dependent and field-dependent longitudinal magnetoresistance…

We report the synthesis and characterization of original 'multishell' magnetic nanoparticles made of a soft core (magnetite) covered with two successive shells: a hard one (cobalt ferrite) and then a soft one (manganese ferrite). Our…

This work is a contribution to the understanding of the electrical resistivity in strontium ferromolybdate (SFMO) ceramics. It demonstrates that an appropriate thermal treatment leads to the formation of dielectric SrMoO4 shells at the…

Emerging spin-orbit-torque devices based on spin valves require a thin magnetic free layer to maximize the torque per moment. However, reducing the free-layer thickness to $\lesssim 2$ nm deteriorates the giant magnetoresistance (GMR)…

Thin van der Waals (vdW) layered magnetic materials disclose the possibility to realize vdW heterostructures with new functionalities. Here we report on the realization and investigation of tunneling spin valves based on van der Waals…

Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…

Defects ubiquitously exist in crystal materials and usually exhibit a very different nature than the bulk matrix, and hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the…

We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both temperature and bias voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly…

Spin Hall magnetoresistance (SMR) measurements provide a way to probe the surface spin structure of insulating magnetic materials. Such measurements produce resistance signals of the form {$\Delta$}R {$\propto$}…

The structures of the superconducting spin valve (SSV) Fe/Si$_3$N$_4$/Pb/Si$_3$N$_4$/Fe (where Si$_3$N$_4$ is a dielectric insulating layer of controlled thickness) were investigated. The dependence of the magnitude of the SSV effect on the…