相关论文: Effect of quantum dot shape of the GaAs/AlAs heter…

Absorption spectra of neutral, negatively and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p-shell transitions, including the influence of nearby…

We study the spectral properties of electron quantum dots (QDs) confined in 2D parabolic harmonic oscillator influenced by external uniform electrical and magnetic fields together with an Aharonov-Bohm (AB) flux field. We use the…

We investigate the effects of the shape of quantum dots on their far-infrared absorption in an external magnetic field by a model calculation. We focus our attention on dots with a parabolic confinement potential deviating from the common…

We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs).…

In this work, the effect of size and wetting layer on subband electronic envelop functions, eigenenergies, linear and nonlinear absorption coefficients and refractive indices of a dome-shaped InAs/GaAs quantum dot were investigated. In our…

A spherical quantum dot (QD) heterosystem CdS/SiO$_2$ has been studied. Each QD has a hydrogen-like impurity in its center. Besides that, it has been accounted that a polarization trap for electron exists at the interfaces due to the…

The electronic continuum states of InAs/GaAs semiconductor quantum dots embedded in a GaAs/AlAs superlattice are theoretically investigated and the far infrared absorption spectra are calculated for a variety of structures and…

Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index…

Spintronics, quantum computing and quantum communication science utilizing cubic semiconductors rely largely on the properties of the hole states, composed of light and heavy hole wavefunction components. The admixture of light-hole (LH)…

Using atomistic pseudopotential wave functions we calculate the electron and hole charging energies of InAs quantum dots. We find that the charging energies depend strongly on the dielectric constant epsilon_out of the surrounding material,…

Excitons confined to flat semiconductor quantum dots with elliptical cross section are considered as we study geometrical effects on exciton binding energy, electron-hole separation, and the resulting linear optical properties. We use…

The hole energy spectrum with the ion of an acceptor impurity in the quantum dot has been calculated using the spherical approximation of the multiband Luttinger model. The dependence of the hole energy levels on the impurity location in…

By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…

The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions…

Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy,…

We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…

We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show…

We have calculated the conduction-to-conduction and valence-to-valence absorption spectrum of bound states in (In,Ga)As/GaAs quantum dots charged with up to three electrons or holes. Several features emerge: (i) In pure (non-alloyed)…

In this paper, we have studied the strain, bandedge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, and also in smaller QDs. Also, it is…

We present a theory for the intersubband absorption including electronic ground state correlations in a doped GaAs/Al_{35}Ga_{65}As quantum well system. Focusing on the influence of the Coulomb interaction among the carriers at low…